Elisa M Sala

Dr. Elisa M Sala is a Research Fellow at the University of Sheffield's School of Electrical and Electronic Engineering, specializing in semiconductor materials within the Semiconductor Materials and Devices Research Group and EPSRC National Epitaxy Facility. Her work focuses on III-V semiconductor epitaxy for quantum photonic applications and nanomemory development.

Education:

• PhD in Solid State Physics, Technical University of Berlin (2018), thesis: 'Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories'
• Graduate in Solid State Physics, University of Milano-Bicocca, Italy (2012)

Dr. Sala's research centers on quantum dot engineering using MOVPE and MBE techniques. She pioneered room-temperature storage records (1 hour) for MOVPE-grown quantum dots in nanomemory architectures (QD-Flash) and investigates droplet epitaxy for telecom-band quantum photonic devices. Her expertise spans III-V semiconductor nanostructures, optical characterization, and morphological analysis of arsenide/phosphide materials.

Recent publications (2020-2025) reveal consistent focus on quantum dot growth optimization, structural analysis, and photonic applications. Key trends include droplet epitaxy control for InAs/InP systems, antimony incorporation effects in GaP-based quantum dots, and engineering of telecom-wavelength emitters. Her work demonstrates strong international collaboration and advanced characterization techniques.

No scientific awards or fellowships were documented in the source material.

Dr. Sala's doctoral research was funded by the German Ministry for Education and Research (BMBF) through the HOFUS project. Currently supported by the EPSRC National Epitaxy Facility, she has no documented advisees but contributes to major collaborative projects in quantum technology and semiconductor innovation.

She operates within Sheffield's Semiconductor Materials and Devices Research Group and the national-scale EPSRC National Epitaxy Facility, utilizing advanced MOVPE systems for III-V semiconductor growth and characterization focused on quantum dot applications in memory and photonic devices.