معرفی
Guang Bian is an Associate Professor in the Department of Physics and Astronomy at the University of Missouri, part of the College of Arts and Science. His research focuses on atomically precise fabrication and spectroscopic characterization of low-dimensional quantum systems, novel electronic materials, and their physical properties. Key techniques include angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and molecular beam epitaxy (MBE). He leads the Quantum Materials Research Group and developed the Missouri Integrated Nano-Analysis System (MINAS) platform.
Education: Ph.D. in Physics from the University of Illinois at Urbana-Champaign.
Research Interests: Exploration of quantum electronic materials, including growth mechanisms, electronic/magnetic structure, surface physics, and quantum size effects. Specific areas include Weyl semimetals, topological insulators, van der Waals heterostructures, and epitaxial thin films. His work bridges experimental and theoretical approaches to discover novel quantum phenomena.
Awards: Chancellor’s Award (2024), Gordon and Betty Moore Foundation Experimental Physics Investigator Award (2023), President’s Award (2019), among others. His research is funded by prestigious grants including the Moore Foundation and university awards.
Labs/Teams: MINAS experimental platform combining ARPES, MBE, and STM capabilities. Collaborations focus on advanced material synthesis and characterization for next-generation quantum technologies.
