GAO Yuzhu

Professor GAO Yuzhu at Tongji University's Department of Electronic Science & Technology is a pioneer in semiconductor crystal growth techniques. With a PhD from Shizuoka University (2002), he developed the melt epitaxy (ME) method for InAsSb materials, enabling breakthroughs in long-wavelength infrared photodetectors and optoelectronic applications. His work has been recognized in publications, patents, and collaborations like the 2011 visiting professorship at Shizuoka University.

• Education: PhD in Electronic Engineering from Shizuoka University (2002)

Research Focus: Specializes in semiconductor epitaxy and optoelectronic materials, particularly:

• InAsSb crystal growth via melt epitaxy
• Suppression of lattice mismatch effects
• Room-temperature infrared photodetectors
• Carrier mobility optimization in compound semiconductors
• Doping techniques for P-type materials
• Thermal annealing effects on crystal quality

Publication Trends: His work spans material synthesis, device fabrication, and characterization over 25+ years, showing continuous innovation in epitaxy methods and infrared sensor development.

Scientific Contributions:

• Developed melt epitaxy method for 8-12 µm cutoff wavelength materials
• Improved crystal mobility (>50,000 cm²/Vs) and purity
• Demonstrated uncooled photodetectors with 10⁻¹ µs response times
• Featured in WILEY book on liquid phase epitaxy advancements

Professional Engagement: IEEE member (No. 94891511), with international collaborations including Stanford University's Prof. Robert who praised his melt epitaxy innovation in a 2001 letter.