معرفی
Francis Chi Chung Ling serves as an Associate Professor in the Department of Physics within the Faculty of Science at The University of Hong Kong (HKU). His academic journey began at HKU where he earned his B.Sc., M.Phil., and Ph.D. degrees. He maintains professional affiliations as C.Phys., M.IEEE, and F.Inst.P., and conducts research at Room 417, Chong Yuet Ming Physics Building.
- Office: CYP 417
- Contact: 3917 5248 / 2559 9152
- Email: ccling@hku.hk
- ORCID: https://orcid.org/0000-0003-4757-1065
Professor Ling's research spans multiple critical areas in semiconductor physics and materials science. His primary focus centers on defect characterization and engineering in semiconductors, particularly examining how defects influence electrical, optical, and magnetic properties. His work with positron annihilation spectroscopy provides atomic-scale insights into vacancy defects, while his investigations into deep level transient spectroscopy and carrier transport mechanisms advance fundamental understanding of semiconductor behavior. His laboratory maintains international collaboration with the positron beam line at Helmoltz Zentrum Dresden Rossendorf in Germany.
Analysis of his 207 publications reveals a strong concentration on zinc oxide (ZnO) systems, silicon carbide (SiC), and other wide bandgap semiconductors. His recent work shows increasing focus on energy applications including photovoltaics, neuromorphic computing elements, and battery materials. The publications demonstrate consistent methodology combining experimental characterization with theoretical analysis, particularly emphasizing defect engineering approaches to modify material properties.
- Faculty Excellent Service Award: Faculty of Science, HKU (2008)
- Best Poster Award: ICMAT 2007, Singapore
- Faculty Knowledge Exchange Award 2024 for SiC Power Devices collaboration
Professor Ling has supervised over 35 research postgraduate students across MPhil and PhD programs, with recent graduates focusing on SiC devices, ZnO-based materials, and 2D semiconductor structures. His grant portfolio includes significant funding as Principal Investigator on 17 projects totaling over HK$8 million, with recent major awards including HK$1.26 million for 'Bipolar Degradation in SiC Devices Suppressed by Proton Implantation' (2023) and HK$804,000 for 'Optimising the Performance of SiC Devices Through the Control of Atomic Scale Deep Level Defect' (2021).
He leads the Material Physics Laboratory within HKU's Experimental Condensed Matter and Material Science Group, specializing in defect characterization and engineering of functional materials. The laboratory maintains specialized equipment for deep level transient spectroscopy, temperature-dependent Hall measurements, and luminescence spectroscopy, with international access to positron beam facilities in Germany.
