Fabian Hartmann

Dr. Fabian Hartmann is a Group Leader of the 'Nanoelectronics' group at the Chair of Technical Physics, University of Würzburg. His research focuses on III-V semiconductor systems, particularly InAs, GaSb, and AlSb, for optoelectronic devices including resonant tunneling diodes (RTDs) and mid-infrared detectors. He leads a team exploring quantum mechanical effects in nanoscale devices, with applications in quantum communication, gas sensing, and topological insulators. His group develops advanced heterostructures and superlattices to enhance device performance in high-speed electronics and photon detection.

Research interests include resonant tunneling phenomena, mid-infrared light emitters/detectors, and topological quantum wells. Key projects involve designing GaSb-based RTD photodetectors for single-photon counting and developing type-II superlattices for enhanced detectivity. The team also investigates dual-gated InAs/GaInSb quantum wells for tunable bandgap energies.

Awards: None explicitly listed. His work is supported by projects such as the Cluster of Excellence ct.qmat and the Würzburg-Wrocław Nanophotonics Center. He advises PhD and master’s students in technical physics and collaborates on EU/DFG-funded initiatives. His laboratory is located in Building P1 (Physics), Room A026, at Am Hubland in Würzburg.