معرفی
Ethan Ahn is an Associate Professor at George Mason University's Department of Electrical and Computer Engineering, part of the Volgenau School of Engineering. Previously, he held academic positions at the University of Texas at San Antonio (2016–2023) and served as a senior panel process engineer at Apple and a postdoctoral researcher at Stanford University. He leads the Mason Nanoelectronics Lab, focusing on nanoscale materials and devices for energy-efficient electronics, spintronics, and beyond-CMOS technologies.
Educational Background:
- PhD in Electrical Engineering, Stanford University (2015)
- MS and BS in Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST, 2005–2007)
Research Interests: His work spans emerging nanomaterials (e.g., graphene, MoS2), energy-efficient logic/memory devices, and carrier transport mechanisms. Key areas include spintronics, phase-change memory, and energy harvesting systems. His lab collaborates with industry and government through VMEC and VAST alliances.
Grants & Awards: Recipient of over $4M in funding, including the AFOSR Grant in Quantum Electronic Solids and the NSF EAGER Grant in Electronics/Photonics. He serves on IEEE technical committees and the editorial board of Scientific Reports.
Labs & Teams: The Mason Nanoelectronics Lab operates a state-of-the-art nanofabrication facility, advancing research in nanoelectronics and workforce development. The lab explores biomedical devices, energy solutions, and smart infrastructure integration.
