معرفی
Dhritiman Bhattacharya is an Assistant Professor in the Department of Electrical & Computer Engineering at Rowan University, affiliated with the Henry M. Rowan College of Engineering. He holds a Ph.D. in Mechanical and Nuclear Engineering from Virginia Commonwealth University (2020) and a B.Sc. in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (2013). Prior to his current role, he was a Postdoctoral Fellow in the Department of Physics at Georgetown University.
His research focuses on overcoming energy limitations in CMOS-based computing through spintronic innovations, leveraging magnetic nanostructures and non-volatile materials to develop novel neuromorphic and memory technologies. Key areas include voltage-controlled skyrmions, magneto-ionic devices, and neuromorphic computing architectures. He has published over 25+ journal articles and received the 2021 Best Paper Award at the ASME Smart Materials Conference, alongside recognition as an Outstanding Reviewer for the Institute of Physics.
His articles explore topics such as magnetic nanostructure design, strain-mediated switching, and reservoir computing with frustrated nanomagnet arrays. Notable contributions include studies on 3D interconnected nanowire networks and physically secure logic locking mechanisms. Professional memberships include IEEE and the American Physical Society.
