معرفی
B. Jayant Baliga is the Progress Energy Distinguished University Professor at NC State University and Director of the Power Semiconductor Research Center (PSRC). He is a Member of the National Academy of Engineering and a Fellow of the IEEE, with a career spanning academia and industry.
- Ph.D., Electrical Engineering, Rensselaer Polytechnic Institute (1974)
- M.S., Electrical Engineering, Rensselaer Polytechnic Institute (1971)
- B.S., Electrical Engineering, Indian Institute of Technology Madras (1969)
Prof. Baliga is a pioneer in power semiconductor devices, inventing the Insulated Gate Bipolar Transistor (IGBT) that revolutionized energy efficiency in automotive, industrial, and renewable energy sectors. His work has enabled 82 gigatons of CO2 emission reductions globally.
His recent publications focus on SiC MOSFETs, voltage balancing, and medium-voltage converter topologies, reflecting his ongoing contributions to advanced semiconductor technologies.
- IEEE Medal of Honor (2016)
- Millennium Technology Prize (2024)
- National Medal of Technology and Innovation (2011)
- Global Energy Prize (2015)
- O. Max Gardner Award (1998)
- IEEE Lamme Medal
With 120 U.S. patents and 18 books, his research has transformed power electronics. He has been recognized as one of Scientific American's Eight Heroes of the Semiconductor Revolution and profiled in Forbes India for cutting-edge engineering work.
