معرفی
Amanda Langørgen is a **Research Fellow** at the University of Oslo's Department of Physics, affiliated with the **Centre for Materials Science and Nanotechnology (SMN)** and the **Solid-state Physics and Quantum Technology** research group. She holds a Master's in Nanotechnology from NTNU (2015-2020). Her work focuses on defects in gallium oxide (Ga2O3), combining experimental techniques like deep-level transient spectroscopy and computational methods for semiconductor analysis. She collaborates on projects such as GO2DEVICE, exploring Ga2O3 thin films for electronic devices.
Research interests include semiconductor physics, defect engineering, and material characterization. Her recent publications (2022–2024) analyze defects in β- and κ-Ga2O3 using advanced spectroscopic methods. She contributes to the development of two-dimensional electron gas devices through defect-level insights.
No scientific awards are explicitly mentioned. She is part of the Faculty of Mathematics and Natural Sciences and conducts research at the Kristen Nygaards hus campus in Oslo.
