معرفی
Ylva Knausgård Hommedal is a Doctoral Research Fellow at the Centre for Materials Science and Nanotechnology within the Physics Department at the University of Oslo. She is affiliated with the Faculty of Mathematics and Natural Sciences and works in the Solid-state Physics and Quantum Technology research group.
Her research focuses on semiconductor materials for next-generation power electronics, specifically investigating the wide bandgap semiconductor β-Ga2O3. Her doctoral project aims to reduce power loss in electrical devices (including electric vehicles, phone chargers, and computers) through studying diffusion mechanisms of dopants in β-Ga2O3 using Secondary Ion Mass Spectrometry (SIMS) and equipment at MiNaLab.
Her recent publications (2022-2024) demonstrate a cohesive research trajectory examining diffusion properties of various dopants (Zn, Ge) in β-Ga2O3, spanning both experimental characterization and theoretical modeling of defect behavior in wide bandgap semiconductors. This work directly supports advancements in power electronics and smart grid technologies.
She is actively involved in the "Defect control in Gallium Oxide for next gen POWer electronics (GO-POW)" project, which seeks to optimize β-Ga2O3 for high-efficiency power conversion applications. Her laboratory work takes place at MiNaLab, the University of Oslo's advanced materials characterization facility.