Kaushik Nayak is an Associate Professor in the Department of Electrical Engineering at the Indian Institute of Technology Hyderabad . His research spans semiconductor device physics, mesoscopic electronics, and electro-thermal effects in nanoscale transistors, with recent work on diamond MOSFETs, 2D material contacts, and thermal resistance in nano-sheet FETs. Ph.D., Indian Institute of Technology Bombay M. Tech., Microelectronics, IIT Bombay B.E., Electronics & Telecommunication, Utkal University He teaches advanced courses on semiconductor device modeling, mesoscopic electronics, and electromagnetic wave propagation. His publications focus on nanoelectronics, device variability, and high-temperature operations. Contact: knayak@ee.iith.ac.in .
Matthias Bucher is a Professor at the Department of Electronics and Computer Engineering, Technical University of Crete. He specializes in analog/RF integrated circuits design, MOSFET compact modeling, and device characterization. His research focuses on nanoscale CMOS, wide-band semiconductor devices, and high-voltage MOSFETs. He leads the Electronics Laboratory and teaches courses such as Electronics II and CMOS Analog IC Design. Education: Ph.D. in Electrical Engineering, Swiss Federal Institute of Technology (EPFL), 1999 M.S. in Electrical Engineering, Swiss Federal Institute of Technology, 1993 Research Interests: Prof. Bucher’s work emphasizes charge-based compact models (e.g., EKV3), RF device modeling, and noise analysis in MOSFETs/JFETs. His contributions include open-source tools for Verilog-A modeling and parameter extraction methodologies for advanced CMOS technologies. Labs/Teams: He directs the Electronics Laboratory , focusing on nanoelectronics and high-reliability circuits. His team collaborates on semiconductor device modeling for aerospace and industrial applications. Grants/Awards: While not explicitly listed, his extensive publication record and leadership in open-source projects indicate sustained recognition in semiconductor research communities.
Marco Pirola is a Full Professor at the Department of Electronics and Telecommunications (DET) of the Polytechnic University of Turin, Italy. He is a member of the Interdepartmental Center 'CleanWaterCenter@PoliTo' and actively contributes to research in high-frequency electronics and microwave engineering. His work focuses on power amplifiers, device characterization, and advanced microwave circuit design. Research Interests: Microwave power devices, GaN technology, 5G/mm-Wave applications, space communications, and smart pipeline monitoring systems. Awards: IEEE Fellow (since 2019), IEEE Senior Member. Recent Publications address topics like Ka-band MMIC amplifiers for SAR systems, broadband Doherty amplifiers using GaN, and harmonic analysis of current-mode power stages. His projects include STARGATE (European GaAs power architectures) and Millimetre-Wave GaN Radar for UAV detection. Teaching: He leads courses on 'Radio Frequency Integrated Circuits' and 'Advanced Devices for High Frequency Applications' at the Polytechnic University of Turin. Supervised PhD students include Wenjun Zhang and Abbas Nasri, who worked on III-V HEMT circuits and GaN power amplifiers.
Guofu Niu is a Professor in the Department of Electrical and Computer Engineering at Auburn University, holding the Ed and Peggy Reynolds Family endowed chair. His research specializes in semiconductor device physics, compact modeling of SiGe heterojunction bipolar transistors (HBTs), FinFETs, and cryogenic electronics for RF and power applications. Key research areas include RF linearity characterization, avalanche effects, thermal noise, and low-temperature device performance. He has developed advanced models (e.g., Mextram) for circuit simulation tools, enhancing the accuracy of semiconductor design workflows. Publications focus on nano-scale device reliability, tunneling currents, and optimization of RF amplifiers, with applications in 5G technology and extreme-environment electronics. Collaborative projects span industry and academia to advance semiconductor modeling frameworks.
Azadeh Davoodi is a Vilas Distinguished Achievement Professor and Associate Chair of Undergraduate Studies in the Department of Electrical and Computer Engineering at the University of Wisconsin-Madison. Her research focuses on Electronic Design Automation (EDA), integrated circuit debug, and machine learning applications in VLSI design. She holds editorial roles in journals like IEEE TCAD and ACM TRETS, and has chaired major conferences such as ISPD 2015 and served on technical program committees for DAC, ICCAD, and others. Education: PhD in Electrical Engineering, University of Maryland-College Park (2006) Research Interests: Machine learning for VLSI chip design VLSI design automation for machine learning IC-CAD for emerging nanotechnologies Hardware security Recent Research Trends: Her work bridges machine learning and hardware design, with publications on neural network optimization, distributed inference, and explainable AI for circuit design. She emphasizes energy-efficient CNNs, latency reduction in edge computing, and security in split manufacturing. Awards: 2025 DATE Best Paper Candidate 2024 Vilas Distinguished Achievement Professor 2015 ACM Best Paper Award 2011 NSF CAREER Award Service and Grants: Leads NSF-funded projects on explainable ML for CAD and holds grants for distributed neural network synthesis. Her service includes roles as IEEE HKN member and editorial board positions. Labs/Teams: Engages in interdisciplinary research teams at UW-Madison, focusing on EDA innovation and hardware-software co-design.
Mark Law is a Professor in the Department of Electrical & Computer Engineering at the University of Florida, part of the Herbert Wertheim College of Engineering. His research focuses on semiconductor process modeling, integrated circuit fabrication, and superconductivity. He leads the ColdFlux superconductor design tool project and has contributed to advancements in Ga2O3 and GaN-based devices. Education: PhD, Electrical Engineering, Stanford University (1988) MS, Electrical Engineering, Stanford University (1982) BS, Computer Engineering, Iowa State University (1981) Research Interests: Design and modeling of IC fabrication processes, semiconductor device behavior, superconducting electronics, radiation effects in semiconductors, and TCAD simulation tools. His work emphasizes practical applications of advanced materials like Ga2O3 and GaN in power electronics and high-voltage devices. Notable Contributions: Developed the ColdFlux EDA tool for superconducting circuits, pioneered edge termination techniques for β-Ga2O3 rectifiers, and modeled radiation damage in wide-bandgap semiconductors. Awards: Fellow, National Collegiate Honors Council (2023) UF Academy of Distinguished Teaching Scholars (2019) IEEE Electron Device Society J.J. Ebers Award (2010) Multiple teaching awards, including College of Engineering Teacher of the Year (1996). Advising & Grants: While no specific students are listed, his research has been supported by industry and government grants. He advises on semiconductor fabrication processes and has led collaborative projects with SEMI and the Semiconductor Research Corporation. Labs & Teams: Leads the ECE Device Simulation Group and collaborates with the University of Florida’s Materials Science Department on advanced semiconductor projects.
Kexin Li is an Assistant Professor in the School of Electrical, Computer and Energy Engineering at Arizona State University since August 2023. She earned her Ph.D. in Electrical and Computer Engineering from the University of Illinois Urbana-Champaign in 2022, followed by a postdoctoral position at Columbia University. Education: Ph.D., Electrical and Computer Engineering, University of Illinois Urbana-Champaign (2022) M.Eng., Computer Engineering, New York University (2019) MSc., Analog and Digital IC Design, Imperial College London (2014) B.Eng., Electronic Science and Technology, Southeast University (2012) Her research focuses on semiconductor device physics and modeling for high-power, high-frequency applications, with particular expertise in wide bandgap materials like GaN. She develops frameworks for technology-circuit co-design that bridge nanoelectronics, device physics, and circuit implementation. Current work emphasizes cryogenic device modeling for quantum computing interfaces and ultra-wideband RF systems. Analysis of her recent publications reveals a strong focus on GaN HEMT characterization, device-circuit co-design methodologies, and cryogenic operation for quantum applications. Her work spans fundamental semiconductor physics, advanced TCAD simulation, and practical circuit implementation for next-generation communication systems. Scientific Recognition: Selected as 2022 EECS Rising Star Editor's Pick in Journal of Applied Physics (2022) for GaN HEMT modeling work Professor Li actively mentors graduate and undergraduate researchers, currently advising five Ph.D. students and four MS/UG students. Her research group collaborates with institutions including AFRL and focuses on creating a collaborative, diverse environment for developing new electronic materials and systems. She teaches courses including Analog and Digital Circuits (EEE 335) and Fundamentals of Solid-State Devices (EEE 436).
John D. Cressler is a Regents Professor and Schlumberger Chair in Electronics at the Georgia Institute of Technology's School of Electrical and Computer Engineering. He earned his B.S. in Physics from Georgia Tech (1984) and Ph.D. in Applied Physics from Columbia University (1990). After pioneering SiGe research at IBM (1984-1992), he joined academia at Auburn University before moving to Georgia Tech in 2002. His research specializes in silicon-germanium heterojunction technology, with focuses on: RF/microwave/mm-wave circuits Radiation effects in electronics Cryogenic semiconductor behavior Device reliability physics Compact modeling for SiGe devices His 700+ publications demonstrate consistent innovation in SiGe HBT design, radiation-hardened circuits, and millimeter-wave systems. Recent work emphasizes radiation tolerance for space applications, high-frequency circuit optimization, and novel fabrication techniques. Major Awards: IEEE Fellow (2001) IEEE Leon K. Kirchmayer Graduate Teaching Award (2011) ONR Young Investigator Award (1994) IEEE Third Millennium Medal (2000) He leads Georgia Tech's SiGe research group with extensive industry collaborations and teaches courses including ECE 3040 (Microelectronic Circuits), ECE 6444 (SiGe Devices), and interdisciplinary courses on science/religion dialogue.
Yury Illarionov is an Associate Professor in the Department of Materials Science and Engineering at Southern University of Science and Technology (SUSTech), Shenzhen, China. He was previously a postdoc researcher at TU Wien's Institute for Microelectronics (2016-2022) and a PhD student at TU Wien and Ioffe Institute (2011-2015). His research focuses on 2D materials for nanoelectronics, optoelectronics, and sensors, with an emphasis on gate insulator development and device reliability. Education: B.Sc. & M.Sc., Technical Physics, Peter the Great St-Petersburg Polytechnic University (2009, 2011) Double M.Sc., Advanced Material Science, Erasmus Mundus FAME Program (2012) Ph.D., Semiconductor Physics, Ioffe Institute (2015) Ph.D., Technical Sciences, TU Wien (2015) His research interests center on: Fabrication of 2D FETs, photodetectors, and sensors with novel insulators (fluorides, native oxides) Advanced device characterization across temperature ranges TCAD modeling for performance and reliability Scalable fabrication techniques compatible with industrial thermal budgets Publications highlight trends in 2D nanoelectronics, oxide trap analysis, and reliability engineering for next-generation devices, spanning journals like Nature Electronics, Nature Communications, ACS Nano, and IEEE Transactions on Electron Devices. Scientific Recognition : IEEE Senior Member (2020) Co-supervisor of multiple PhD awards (2015-2023) Best poster award (ICP2DC4, 2019) Erasmus Mundus scholarship (2010) High school gold medal (2005) Advising includes direct supervision of PhD students like T. Knobloch, with collaborative efforts across international teams. His lab, Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON) , combines academic rigor with industrial partnerships to advance scalable 2D device technologies.
Prof. Colombo R. Bolognesi is a Full Professor of Millimeter-Wave Electronics at ETH Zürich's Department of Information Technology and Electrical Engineering. He holds a PhD in Electrical Engineering from the University of California, Santa Barbara, and has held academic positions at Simon Fraser University (1995-2006) before joining ETH in 2006. His research focuses on III-V semiconductor devices, particularly InP/GaAsSb and InP/GaInAsSb double heterojunction bipolar transistors (DHBTs), with applications in millimeter-wave and terahertz electronics. His work emphasizes device physics, high-frequency performance, and optoelectronic integration, including uni-traveling carrier (UTC) photodiodes and compact modeling. He has authored over 175 publications and holds prestigious awards such as IEEE Fellow (2008) and the Frontiers in Research Award (2001). Education: Bachelor of Electrical Engineering, McGill University (1987) Master of Electrical Engineering, Carleton University (1989) PhD in Electrical Engineering, University of California, Santa Barbara (1994) Research Interests: Millimeter-wave transistors, semiconductor device physics, high-frequency electronics, terahertz applications, UTC photodiodes, and compact modeling. His recent work includes record-breaking power-added efficiency (PAE) in InP/GaAsSb DHBTs at 170 GHz, advanced UTC photodiodes for 300 Gbps communications, and terahertz characterization of DHBTs. He leads a research group at ETH Zurich focused on pushing the boundaries of III-V semiconductor device performance for next-generation RF and optoelectronic systems. Awards: IEEE Fellow (2008), IEEE Senior Member (2003), Frontiers in Research Award (2001), GaAs IC Symposium Best Paper Award (1999), IEE Electronics Letters Premium Award (1998). Advising & Grants: While specific student names are not listed, his research involves collaboration with PhD/Master's students and postdoctoral researchers. His work is supported by grants from the Swiss National Science Foundation and industry partnerships in semiconductor technology. Key projects include developing UTC photodiodes and DHBT-based power amplifiers for 5G/6G applications. Labs/Teams: His research is conducted within ETH Zurich's Millimeter-Wave Electronics group, leveraging state-of-the-art fabrication facilities and characterization tools for III-V semiconductor devices.
Olin Hartin serves as a Professor of Practice in Arizona State University's School of Electrical, Computer and Energy Engineering, leveraging over 30 years of Fortune 500 industry experience in science and technology. Based at the Tempe campus (GWC 340, Mailcode 5706), he maintains an active research profile with 25 patents and more than 60 scholarly publications. His academic credentials include: Ph.D. in Electrical Engineering M.S. in Electrical Engineering M.S. in Physics B.S. in Physics Hartin's research centers on advanced device technologies and materials, with demonstrated expertise in nanoengineering, RF circuit design, and semiconductor physics. His work bridges theoretical modeling with practical fabrication challenges, particularly in gallium nitride transistor development and electromagnetic compatibility. Recent projects address thermal management in high-power devices and noise isolation techniques for mixed-signal integrated circuits, driven by industry applications in wireless infrastructure. Analysis of his publication history reveals sustained focus on GaN HEMTs since 2010, with increasing emphasis on machine learning applications for FPGA deployment. His work consistently targets real-world implementation challenges, reflecting his industry background through patents in antenna design, ESD protection, and RF component optimization. Professional recognition includes: Senior Member of IEEE In teaching, Hartin supervises senior design laboratories (EEE 488/489) and instructs core courses including Hardware Design Language/Programming Logic (EEE 333), Circuits II (EEE 334), and Machine Learning with FPGA Deployment (EEE 405). His industry perspective enriches curriculum development, though specific grant funding details are not publicly documented. While no dedicated research lab is specified, his patent portfolio indicates ongoing collaboration with semiconductor industry partners.
Dr. Luiz Felipe Aguinsky is a Lecturer in Computational Nanoelectronics and Deputy Group Leader of the DeepNano Research Group at the University of Glasgow. He holds a PhD (Dr. techn.) from TU Wien, Austria, where he specialized in semiconductor fabrication process modeling. As an Erwin Schrödinger Fellow at ETH Zurich, he developed machine learning-enhanced models for memristors. His research focuses on computational nanoelectronics, combining advanced simulation techniques with cutting-edge materials science. Education: PhD (Dr. techn.) in Microelectronics, TU Wien (Austria), 2019 (with distinction) Erwin Schrödinger Fellowship at ETH Zurich's Computational Electronics Group (2021–2023) Research Interests: His work integrates machine learning with atomistic simulations to address challenges in semiconductor manufacturing. Key areas include: High-performance TCAD for nanofabrication processes Quantum transport and neuromorphic computing Applied computer graphics for nonimaging applications Level-set methods for surface evolution modeling Publications Trends: Recent work emphasizes knudsen diffusion modeling for nanofabrication, atomic layer deposition simulations, and plasma etching optimization. Cross-disciplinary methods like ray tracing and machine learning feature prominently in his latest projects. Awards & Fellowships: EUROSOI-ULIS Best Poster Award (2021) Erwin Schrödinger Fellowship (FWF, 2023–2025) Professional Activities: Active member of IEEE Nanotechnology Council's Modelling & Simulation Technical Committee. Co-author of over 15 peer-reviewed publications since 2019, with contributions to IEEE NANO, SISPAD, and EuroSOI conferences. Labs/Teams: Leads computational modeling efforts in the DeepNano Research Group, collaborating globally on TCAD innovations for next-generation semiconductor devices.
Christoph Jungemann is a Professor at RWTH Aachen University in the Faculty of Electrical Engineering and Information Technology, where he serves as Vice Dean and heads the Institute for Theoretical Electrical Engineering. He obtained his diploma and doctorate in electrical engineering from RWTH Aachen and completed habilitations at the University of Bremen and TU Braunschweig. His career includes academic positions at Fujitsu in Japan, the University of Bremen, Stanford University, TU Braunschweig, and the University of the Federal Armed Forces in Munich. His research focuses on semiconductor device modeling, particularly using the Boltzmann transport equation, noise simulation, SiGe HBTs, THz devices, ReRAM, and cryogenic electronics. He employs deterministic and Monte Carlo methods for advanced TCAD applications. His recent work explores high-harmonic generation in doped silicon, plasma waves, and compact modeling of III-V devices. His publication trend shows sustained leadership in computational electronics, with emphasis on numerical stability, multi-scale modeling, and emerging device technologies for quantum and high-frequency applications. IEEE Paul Rappaport Award (2006) IEEE Fellow (2019) RWTH Teaching Award (2017) He has advised numerous researchers and co-authored extensively with colleagues in device physics and modeling. He has led major projects such as DOTSEVEN and edited special issues on next-generation TCAD. He has also served as co-editor of IEEE Transactions on Electron Devices and contributed to accreditation in engineering education through ASIIN. He leads a research group focused on theoretical electrical engineering, advancing simulation methodologies for next-generation semiconductor devices.
Dr. QUAN Chen is an Associate Professor at the School of Microelectronics, Southern University of Science and Technology (SUSTech), holding this position since May 2025 after serving as Assistant Professor (2019-2025) and Research Assistant Professor at the University of Hong Kong (2012-2018). A Shenzhen high-level overseas talent, he earned his PhD from the University of Hong Kong and conducts cutting-edge research in electronic design automation. His academic credentials include: Ph.D. from The University of Hong Kong (2010) Master's degree from The University of Hong Kong (2007) Bachelor's degree from Sun Yat-Sen University (2005) Dr. Chen's research pioneers advanced EDA algorithms for large-scale analog/RF circuit simulation, post-Moore multi-physics analysis, and AI-assisted design technologies. His work addresses critical challenges in nanodevice modeling and quantum computing circuits, resulting in over 50 publications in top venues like IEEE TCAD and DAC, plus four Chinese patents. Analysis of his recent publications reveals dominant trends in exponential integrator methods for transient simulation, model order reduction techniques, and physics-informed machine learning for reliability analysis. His work bridges numerical mathematics with practical EDA applications across analog circuits, quantum hardware, and emerging memory technologies. Key recognitions include: Wu Wenjun Artificial Intelligence Science and Technology Award, Second Prize (2020) ICCAD Best Paper Award Nomination (2012) Dr. Chen actively recruits Postdoctoral Fellows, Research Assistants, and Graduate Students while leading major funded projects including NSFC key/general programs and Guangdong Provincial R&D initiatives. His industry partnerships with Huawei, Empyrean, and Guowei Group translate theoretical advances into real-world EDA solutions. He directs a specialized research group at SUSTech focused on computational methods for next-generation circuit design, fostering innovation in simulation algorithms and multi-physics analysis through academic-industry collaboration.
Jean-Luc Autran is an Exceptional University Professor (PRCE2) at Aix-Marseille University, affiliated with the Department of Detection, Radiation and Reliability (DETECT) within the Faculty of Sciences. Since July 2023, he has been temporarily assigned to the University of Rennes for managerial roles. His research focuses on radiation effects in microelectronics, particularly soft errors caused by atmospheric neutrons, muons, protons, and terrestrial radiation in nanoscale devices. Key Research Areas: Microelectronics Reliability, Single-Event Effects, Atmospheric Radiation, Neutron Interactions, Muon Physics, Radiation-Hardened Design. Scientific Leadership: As an Honorary Member of the Institut Universitaire de France (since 2003), he leads multidisciplinary efforts from radiation metrology to multi-physics circuit simulation via tools like GEANT4, SRIM, and NGSPICE. His work spans 25+ years, evolving from quantum transport in nano-MOSFETs (1998-2008) to atmospheric radiation effects (2005-present). Recent Contributions: 2025 studies on ultrawide-bandgap semiconductors, deep learning-based radiation simulations, and JET Tokamak neutron experiments. He pioneers a multi-scale Single-Event Effect simulation framework for decananometer CMOS, integrating particle physics, device modeling, and system-level error rate prediction. Scientific Awards: Honorary Member, Institut Universitaire de France (2003 class). Educational Impact: Teaches graduate courses in quantum mechanics simulation, nanoelectronics reliability, and radiation detection at Aix-Marseille University, with lectures delivered in English for international audiences.
