Yury Illarionov

Yury Illarionov is an Associate Professor in the Department of Materials Science and Engineering at Southern University of Science and Technology (SUSTech), Shenzhen, China. He was previously a postdoc researcher at TU Wien's Institute for Microelectronics (2016-2022) and a PhD student at TU Wien and Ioffe Institute (2011-2015). His research focuses on 2D materials for nanoelectronics, optoelectronics, and sensors, with an emphasis on gate insulator development and device reliability.

• Education:
  • B.Sc. & M.Sc., Technical Physics, Peter the Great St-Petersburg Polytechnic University (2009, 2011)
  • Double M.Sc., Advanced Material Science, Erasmus Mundus FAME Program (2012)
  • Ph.D., Semiconductor Physics, Ioffe Institute (2015)
  • Ph.D., Technical Sciences, TU Wien (2015)

His research interests center on:

• Fabrication of 2D FETs, photodetectors, and sensors with novel insulators (fluorides, native oxides)
• Advanced device characterization across temperature ranges
• TCAD modeling for performance and reliability
• Scalable fabrication techniques compatible with industrial thermal budgets

Publications highlight trends in 2D nanoelectronics, oxide trap analysis, and reliability engineering for next-generation devices, spanning journals like Nature Electronics, Nature Communications, ACS Nano, and IEEE Transactions on Electron Devices.

Scientific Recognition:

• IEEE Senior Member (2020)
• Co-supervisor of multiple PhD awards (2015-2023)
• Best poster award (ICP2DC4, 2019)
• Erasmus Mundus scholarship (2010)
• High school gold medal (2005)

Advising includes direct supervision of PhD students like T. Knobloch, with collaborative efforts across international teams. His lab, Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), combines academic rigor with industrial partnerships to advance scalable 2D device technologies.