Marie LESECQ

Marie LESECQ is an Associate Professor at the Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, France. She leads research on GaN-based devices, focusing on technological fabrication, electrical characterization, and microwave applications. Her work addresses high-frequency/high-power applications, including HEMTs and thermal management. She has managed six PhD projects on GaN technology and contributed to ANR-funded initiatives like CREATIVEPI, SATELLITE, and FLEXIGaN. She also supervises device fabrication in the IEMN cleanroom and participates in national clusters (GaNEX, LEAF, CPER CIA).

Education: PhD in Micro-Nanotechnologies (2007, IEMN/University of Lille), M.Sc. in Micro-Nanotechnologies (2004, École Polytechnique Universitaire de Lille).

Research interests include GaN HEMT thermal modeling, high-efficiency power converters, and nanoribbon-channel devices. She collaborates with institutions like CRHEA, LAAS, and OMMIC. Her projects span ultra-low-power sensors, THz electronics, and energy-efficient systems.

Teaching: Involvement at IUT A (University of Lille) in microelectronics and nanotechnology curricula.