جست‌وجوی استاد و پژوهشگر

• Semiconductor Device Modeling
• Boltzmann Transport Equation
• TCAD (Technology Computer-Aided Design)
• +۱۱ مورد دیگر

Christoph Jungemann is a Professor at RWTH Aachen University in the Faculty of Electrical Engineering and Information Technology, where he serves as Vice Dean and heads the Institute for Theoretical Electrical Engineering. He obtained his diploma and doctorate in electrical engineering from RWTH Aachen and completed habilitations at the University of Bremen and TU Braunschweig. His career includes academic positions at Fujitsu in Japan, the University of Bremen, Stanford University, TU Braunschweig, and the University of the Federal Armed Forces in Munich. His research focuses on semiconductor device modeling, particularly using the Boltzmann transport equation, noise simulation, SiGe HBTs, THz devices, ReRAM, and cryogenic electronics. He employs deterministic and Monte Carlo methods for advanced TCAD applications. His recent work explores high-harmonic generation in doped silicon, plasma waves, and compact modeling of III-V devices. His publication trend shows sustained leadership in computational electronics, with emphasis on numerical stability, multi-scale modeling, and emerging device technologies for quantum and high-frequency applications. IEEE Paul Rappaport Award (2006) IEEE Fellow (2019) RWTH Teaching Award (2017) He has advised numerous researchers and co-authored extensively with colleagues in device physics and modeling. He has led major projects such as DOTSEVEN and edited special issues on next-generation TCAD. He has also served as co-editor of IEEE Transactions on Electron Devices and contributed to accreditation in engineering education through ASIIN. He leads a research group focused on theoretical electrical engineering, advancing simulation methodologies for next-generation semiconductor devices.

• Materials Science
• Semiconductor Physics
• Nanotechnology
• +۳ مورد دیگر

Prof. Huixin (Helen) Xiu is an Associate Professor at the School of Materials and Chemistry, University of Shanghai for Science and Technology, China. She concurrently serves as a visiting scholar at the NG group, Max-Planck Institute for Sustainable Materials. Her research focuses on semiconductor materials, optoelectronics, and nanotechnology, with an emphasis on degradation mechanisms in GaN-based devices and advanced materials characterization techniques like atom probe tomography. She holds a PhD from the University of Cambridge (UK) and completed postdoctoral research at the National Institute for Materials Science (Japan). Education: PhD, University of Cambridge, UK (2004-2009) Bachelor and Master, University of Science and Technology Beijing, China (2001-2004) Research interests include semiconductor device reliability, nanomaterials for photocatalysis, and sustainable materials engineering. Her work spans atom-scale analysis of defects, optoelectronic device optimization, and environmental applications of advanced materials. Her publications highlight advancements in GaN laser diodes, graphene-based composites, and hydrogen evolution catalysts. She has contributed to understanding stacking fault impacts, Mg cluster formation in lasers, and synergistic effects in photocatalytic systems. Labs/Teams: Member of the Nanoanalytics and Interfaces research group at her university and collaborates with the NG group at Max-Planck Institute.