Lasse Vines is a Professor of Solid-state Physics and Quantum Technology at the University of Oslo (UiO), affiliated with the Department of Physics and the Center for Materials Science and Nanotechnology. His research focuses on semiconductor physics, materials physics in bulk, thin films, and nanostructures, with applications in solar cells, power electronics, and quantum technology. Key interests include point defects, doping, and diffusion in semiconductors like SiC and Ga2O3. Affiliations: Faculty of Mathematics and Natural Sciences, UiO; Center for Materials Science and Nanotechnology Education: MSc in Physics and Mathematics (NTNU, 2001), PhD in Semiconductor Physics (UiO, 2008) Research Dr. Vines investigates semiconductor defects and their impact on material properties. Recent work includes defect profiling in SiC using SIMS/DLTS, diffusion mechanisms in Ga2O3, and defect-engineered quantum emitters in ZnO. His articles analyze defect dynamics, radiation tolerance, and phase transformations in wide bandgap semiconductors. Publications Recent trends emphasize defect-engineered semiconductors, ion implantation effects, and luminescence mechanisms. Key areas include 4H-SiC device optimization, β-Ga2O3 doping, and quantum material platforms for future technologies. Grants & Projects Involved in projects like GO-POW (Gallium Oxide for Power Electronics), QuTe (Quantum Emitters in Semiconductors), and SiQUEST (Silicon Quantum Technologies). These focus on defect control, quantum materials, and semiconductor applications.
