Sriram Krishnamoorthy

Sriram Krishnamoorthy is an Associate Professor in the Department of Materials at the University of California, Santa Barbara (UCSB), within the College of Engineering. His research focuses on next-generation (ultra)wide band gap semiconductors such as gallium oxide (β-Ga₂O₃), exploring their epitaxial growth, electronic transport, device design, and applications in power electronics, high-frequency electronics, and UV optoelectronics. He holds a Ph.D. in Electrical Engineering from The Ohio State University, and dual bachelor’s and master’s degrees in Physics and Electrical Engineering from Birla Institute of Technology & Science (BITS)-Pilani.

His research group emphasizes interdisciplinary approaches spanning materials science, electrical engineering, and physics. Key projects include developing high-performance β-Ga₂O₃-based diodes, transistors, and photodetectors, leveraging advanced fabrication techniques like plasma-assisted molecular beam epitaxy (PAMBE) and atomic layer deposition (ALD). Recent work highlights include achieving ultra-low reverse leakage currents in Schottky barrier diodes and demonstrating kilovolt-class MOSFETs on bulk substrates.

Funding sources include the National Science Foundation (NSF), Department of Energy (DOE), and Department of Defense (DoD), with collaborations extending to industry partners like Coherent/II-VI Foundation. His publications reflect a focus on dielectric engineering, defect characterization, and device scalability for grid-scale and high-frequency applications.

Current research trends emphasize anisotropic properties of β-Ga₂O₃, high-k dielectric integration, and alloyed materials like β-(AlₓGa₁₋ₓ)₂O₃ to enhance device performance. The group also investigates laser-induced defects and thermal management strategies via Ga₂O₃-on-SiC composite substrates.