معرفی
Prof. RNDr. Pavel Höschl, DrSc. is a faculty member at the Institute of Physics, Charles University, Prague. He works in the Department of Semiconductor Physics with a focus on semiconductor materials like CdTe and CdZnTe for optoelectronics and radiation detection. His lab is located in room F234a, 2nd floor, Ke Karlovu 5, Prague 2.
- Research Interests: Semiconductor defect engineering, crystal growth, radiation detector materials, optoelectronic properties.
- Grants: Led TRIO grant (MPO-TRIO FV30059) and TACR grant (TA03010103) on CdTe monocrystal synthesis for optoelectronics.
Key Publications: His work spans chemical etching, defect equilibrium, charge transport modeling, and annealing techniques in CdTe-based semiconductors. Articles appear in journals like IEEE Transactions on Nuclear Science, Journal of Electronic Materials, and Semiconductor Science and Technology.
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