Paradisanos Ioannis

Dr. Ioannis Paradisanos is currently an H.F.R.I. Research Fellow at the Institute of Electronic Structure and Laser (IESL) of FORTH in Greece. His career includes postdoctoral research at the University of Cambridge (2018–2019), the Quantum Optoelectronics Group in Toulouse (2019–2022), and his current position since 2022. He holds a Ph.D. in Exciton Physics (2018) and M.Sc. in Micro-Optoelectronics (2014) from the University of Crete, along with a B.Sc. in Materials Science & Technology (2012).

His research focuses on light-matter interactions in 2D semiconductors, exciton dynamics, spin-valley polarization, and optoelectronic properties of layered materials. Key areas include exciton-exciton/phonon interactions, interlayer coupling in heterostructures, and nonlinear optical phenomena.

Publications highlight advancements in second harmonic generation control, phonon cascades, and exciton-mediated phenomena in materials like MoS₂ and WSe₂. His work bridges fundamental physics with applications in nanophotonics and optoelectronic devices.

Research has been supported by the Hellenic Foundation for Research and Innovation (H.F.R.I.). Notable contributions include studies on valley polarization, exciton Stark effects, and exciton collimation in 2D heterostructures.