معرفی
Prof. Dr. Hans Christian Hofsäss is a Professor at the University of Göttingen since 1998. He has been a group leader of experiments at ISOLDE/CERN since 1989 and is affiliated with nuclear solid state physics, thin film physics, and ion beam physics. His work focuses on semiconductor impurities and defects, ion-solid interactions, and advanced ion beam analysis techniques.
Research Interests:
- Implanted impurities and defects in semiconductors (e.g., diamond, GaN) using emission channeling, PAC, and PL studies.
- Ion beam synthesis of materials, including nucleation and growth of diamondlike thin films.
- Development of novel ion beam analysis methods like scattering-recoil coincidence spectroscopy and position-sensitive detection.
Scientific Awards:
- Dornier Research Award (1988)
Contact:
Friedrich-Hund-Platz 1, 37077 Göttingen
Phone: +49 551 39 27669 | Fax: +49 551 39 24493
حوزههای پژوهشی
Nuclear Solid State PhysicsThin Film PhysicsIon Beam PhysicsSemiconductor Impurities and DefectsIon-Solid InteractionDiamondlike Thin FilmsEmission ChannelingPerturbed Angular Correlation (PAC)Photoluminescence (PL)Ion Beam AnalysisScattering-Recoil Coincidence SpectroscopyPosition Sensitive Detection in Ion Scattering
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