Francesco Maria Puglisi

Francesco Maria Puglisi serves as Associate Professor of Electronics at the University of Modena and Reggio Emilia since 2018, leading research in semiconductor device physics with emphasis on emerging memory technologies and neuromorphic systems. His expertise spans characterization, physics-based modeling, and reliability analysis of next-generation electronic devices.

His research portfolio prominently features:

• Resistive Random-Access Memory (RRAM) for non-volatile storage and neuromorphic computing
• Random Telegraph Noise (RTN) mechanisms in FinFETs and memristors
• Compact modeling frameworks for device simulation
• Reliability assessment of 2D materials and III-V semiconductor devices
• Memory-in-logic architectures enabling non-Von Neumann computation
• Hardware security applications leveraging device physics

Analysis of his 2023-2025 publications reveals a pronounced shift toward in-memory computing solutions, particularly SIMPLY architecture implementations using RRAM/STT-MRAM, alongside deep investigations into ferroelectric device dynamics and RTN-based cryptographic primitives. His work consistently bridges fundamental device physics with practical circuit design for energy-efficient computing.

Notable scientific recognitions include:

• IEEE ICICDT 2013 Best Paper Award for Resistive Memories modeling
• IEEE ESSDERC 2016 Best Paper Award for RTN in FinFETs
• IEEE ESSDERC 2019 Best Paper Award for advanced memory characterization

Dr. Puglisi has additionally received multiple national awards for academic excellence and research impact. While his advisory activities and grant portfolio aren't detailed in available sources, his extensive publication record demonstrates significant contributions to semiconductor device engineering through both theoretical modeling and experimental validation.