معرفی
Professor David Moran is Professor of Advanced Semiconductors in the School of Engineering at the University of Glasgow, specializing in Electronic & Nanoscale Engineering. He leads the Advanced Semiconductor Materials and Devices research group, focusing on cutting-edge semiconductor technologies for next-generation electronic applications.
His research spans multiple areas of semiconductor physics and engineering, with particular emphasis on diamond-based electronics and wide bandgap materials. His work includes significant contributions to understanding surface transfer doping mechanisms, developing high-performance diamond FETs, and exploring applications of materials like GaN, AlGaN, Ga2O3, and 2D dichalcogenides in power electronics, quantum technologies, and radiation detection systems.
Professor Moran has published extensively on diamond surface science, hydrogen termination processes, and the development of novel semiconductor devices. His recent work demonstrates a strong focus on advancing diamond electronics while expanding into 2D materials for energy applications. His research bridges fundamental materials science with practical device engineering.
He leads an active research group at the University of Glasgow, collaborating with researchers internationally to develop next-generation semiconductor technologies that overcome limitations of traditional silicon-based devices. His laboratory likely includes advanced capabilities for semiconductor device fabrication, materials characterization, and electrical testing.
