Daniel Jorge Errandonea Ponce

Daniel Jorge Errandonea Ponce is a Professor in the Department of Applied Physics at the Faculty of Physics, University of Valencia, Spain. He is affiliated with the Institute of Material Science (ICMUV) and a member of the FOSE (Photonics and Semiconductors) research group, where his work focuses on the physical properties of semiconductor materials under extreme conditions.

His research interests lie primarily in applied physics and materials science, with a strong emphasis on semiconductors under high pressure, electronic band structure, and solid-state physics. His work bridges experimental and theoretical approaches to understand how materials behave under compression, which has implications for both fundamental physics and technological applications in photonics and electronics.

The trends in his research, although not detailed in recent publications here, are aligned with condensed matter physics and advanced materials characterization, particularly focusing on III-V and III-IV semiconductors. His long-standing focus on pressure-dependent structural and electronic properties suggests a deep commitment to understanding phase transitions and material stability.

• Scientific Awards: No awards listed in the provided text.

He has supervised at least one doctoral thesis—his own—completed at the University of Valencia in 1998, under the supervision of Dr. Alfredo Segura García del Río. There is no information on grants or external funding in the provided data.

Daniel Jorge Errandonea Ponce conducts his research within the FOSE group at the Institute of Material Science (ICMUV), a recognized interdisciplinary research center at the University of Valencia dedicated to the study of advanced materials for technological applications.