معرفی
Christophe GAQUIÈRE is a full professor at the University of Lille (Polytech Lille) and leads research at the Institut d’Electronique de Microélectronique et de Nanotechnology (IEMN). He earned his Ph.D. in Electronics from the University of Lille in 1995. His research focuses on the design, fabrication, and characterization of HEMT and HBT devices, particularly in GaAs, InP, metamorphic HEMTs, and GaN. His work emphasizes microwave characterization (1–500 GHz) to correlate performance with technological parameters. Current projects include GaN-based THz detectors/emitters, AlGaN/GaN nanowires, and MEMS. He led the microwave characterization segment of a Thales-TRT-IEMN lab (2003–2007) and now oversees ST Microelectronics-IEMN collaborations on silicon millimeter-wave technologies.
He co-founded MC2-Technologies (2014) as Chief Technical Officer (CTO), specializing in microwave circuit design, radar systems, and THz sensor development for security and radar applications. His research spans multiple groups, including PUISSANCE (focusing on GaN thermal modeling and power performance), ANODE (THz electronics and nano-device characterization), and OPTO (THz photonics). Collaborations include projects on ultra-low-power biosensors and energy-efficient microelectronics. Over 150 publications and 300 presentations reflect his extensive contributions.
Key projects include GaN HEMT thermal modeling, 40 GHz power performance on silicon substrates, and THz emitters/detectors. His work bridges academic research with industry through partnerships with Thales, ST Microelectronics, and others. Ongoing studies explore nanoribbon-channel GaN HEMTs and novel thermal management techniques for high-efficiency power converters.
