Adrian SLAV

Dr. Adrian SLAV is a Scientific Researcher II at the National Institute of Materials Physics in Romania, where he leads research in the Si-and Ge Based Nanomaterials and Nanostructures Group. With a PhD in Solid State Physics from the University of Bucharest, he has dedicated his career to advancing nanomaterials for optoelectronic and memory applications.

His educational background includes a PhD in Solid State Physics (2013) from the University of Bucharest, a Master of Physics in Polymer and Materials Physics (2004), and a License in Engineering Physics (2002), all from the University of Bucharest's Faculty of Physics.

Dr. SLAV's research focuses on nanostructured materials based on Ge, Si and GeSi, particularly GeSi quantum dots/nanocrystals embedded in oxide matrices (TiO2 and HfO2). His work spans the preparation, experimental and modeling of electrical transport and phototransport properties correlated with structure and morphology. He has extensive expertise in deposition techniques, electrical characterization, and nanocrystallization processes for memory and photodetection applications. His recent publications demonstrate a strong emphasis on short-wave infrared (SWIR) photodetectors using GeSn and SiGeSn nanocrystals, with significant advancements in photosensitivity and device performance.

His scientific contributions include four notable patents related to photosensitive nanostructured films and non-volatile memory structures. These patents cover innovations in GeSi-HfO2 films for infrared detection, GeSi nanocrystals in TiO2 for VIS-NIR photodetectors, GeSn alloy nanocrystals for SWIR applications, and capacitive matrices for non-volatile memory based on Ge nanocrystals embedded in HfO2.

Dr. SLAV has been involved in multiple research projects including 'Synaptic neuron-like structure based on HfO2/GeSn with ferroelectric field effect,' 'Broadband photodetector based on hydrogenated GeSn layers,' and 'GeSn layers with enhanced photosensitivity by field effect.' His work at the Laboratory of Atomic Structures and Defects in Advanced Materials (LASDAM) has established him as a leading researcher in nanomaterials for optoelectronic applications.