Professor Shubhra Pasayat is affiliated with the Department of Electrical and Computer Engineering and Materials Science & Engineering at the University of Wisconsin-Madison. She holds a PhD (2021) and MS (2017) from University of California, Santa Barbara, and a B.Tech (2013) from Indian Institute of Technology Kharagpur. Research focus: MOCVD growth of III-nitrides/oxides for optoelectronics, power electronics, quantum materials, and bio-photonics Key applications: LEDs, LASERs, HEMTs, bio-photonics, and sanitization technologies Her research interests center on wide bandgap semiconductor materials, particularly group-III nitrides and oxides. She works on strain relaxation techniques using porous GaN substrates, quantum dot engineering for visible light emission, and high-voltage GaN HEMT development. Current projects include lattice engineering for improved crystal quality and thermal management in RF devices. Publications highlight advancements in ultraviolet lasers, high-electron-mobility transistors, and micro-LEDs. Her work spans fundamental material studies and device optimization for industrial applications like electric vehicles, 5G/6G communications, and horticultural lighting. 2024 Awards : NSF CAREER, ONR DEPSCoR, WARF Early Career Innovator 2022 Awards : UCSB ECE Outstanding Dissertation, JAP Best Paper She teaches ECE 235 Introduction to Solid State Electronics and mentors research at both graduate and undergraduate levels.
Arunima Singh is an Assistant Professor in the Department of Physics at Arizona State University (ASU), with graduate faculty status in the Materials Science and Engineering Department. Her work focuses on computational materials discovery, leveraging first-principics simulations and data science to accelerate the design of materials for energy applications. She leads research at the Computational Materials Design Lab and co-leads a thrust at ULTRA, a DOE-Energy Frontier Research Center, and has received the 2023 Department of Energy Early Career Research Program Award. Ph.D., Cornell University (2014) B.Tech., Indian Institute of Technology Kharagpur (2009) Her research bridges materials science , surface science , and renewable energy , with a strong emphasis on 2D materials , nanostructures , and machine learning for materials design. She also explores electronic properties at material interfaces and phonon behavior at grain boundaries. The 2025–2023 articles highlight her expertise in heterostructures , wide bandgap materials , and data-driven discovery , with recurring themes in solar energy conversion , nanoengineering , and first-principles simulations . These works often involve machine learning and high-throughput workflows for materials optimization. Scientific Awards 2023 Department of Energy (DOE) Early Career Research Program Award She teaches courses such as Quantum Theory of Solids I , University Physics I: Mechanics , and research/dissertation sections (PHY 792, MSE 792, etc.). Her service includes expertise in computational modeling , solar materials , and nanoscience .
Debdeep Jena is the David E. Burr Professor of Engineering at Cornell University, holding appointments in the Departments of Electrical and Computer Engineering and Materials Science and Engineering, and serving as a field member in Applied and Engineering Physics. He joined Cornell in 2015 after twelve years on the faculty at the University of Notre Dame. Professor Jena's research focuses on the quantum physics of semiconductors and electronic/photonic devices based on quantized semiconductor structures. His work spans Nitrides, Oxides, and 2D Materials, with applications in energy-efficient transistors, LEDs, RF and power electronics, and quantum computation. His group explores the fundamental limits of computation, memory, and communications by exploiting new physics in semiconductor devices, particularly investigating ultrahigh-speed GaN and AlN transistors, ultra-wide bandgap semiconductors for power electronics, deep-UV LEDs and lasers, and novel materials for quantum computing. His recent publications demonstrate a consistent trajectory toward integrating semiconductors with superconductors, ferroelectrics, and magnets to create hybrid quantum systems. This research direction aims to overcome classical device limits while dramatically improving energy efficiency across computing, communications, and power management applications from the chip to the grid level. Art Gossard MBE Innovator Award, North American Conference on Molecular Beam Epitaxy (NAMBE) 2024 Intel Outstanding Researcher Award 2020 David Burr Chair Professor of Engineering 2020 Fellow, American Physical Society 2016 MBE Young Scientist Award 2014 IBM Faculty Award 2012 Professor Jena leads a $34 million research center focused on energy-efficient semiconductor materials and technologies. His research group actively engages in materials synthesis using Molecular Beam Epitaxy (MBE) while collaborating with theoretical physicists to develop comprehensive understanding of electron transport, light-matter interactions, and correlated electron physics. In 2022, he published the textbook 'Quantum Physics of Semiconductor Materials and Devices' through Oxford University Press, which has become a top seller in solid-state physics and electromagnetism categories. The Jena research group operates at the intersection of multiple advanced materials systems, maintaining expertise in Nitride Electronics, Oxide Electronics, UV Lasers/Photonics, 2D Materials, Ultrapolar/Ferro Semiconductors, and Super/Semi Electronics. Their work spans fundamental materials science to device engineering, with strong connections to energy systems, advanced materials processing, and quantum information science applications.
Professor John D. Cressler is a tenured faculty member at the Georgia Institute of Technology, holding a position within the School of Electrical and Computer Engineering in the College of Engineering. His research focuses on cutting-edge semiconductor technologies, particularly silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for mixed-signal applications spanning RF, microwave, mm-wave, analog, and digital domains. His research interests center on atomic-scale bandgap engineering for next-generation semiconductor devices, with emphasis on SiGe HBT technology development, radiation-hardened circuits for space applications, cryogenic electronics, and device-circuit interactions. His team explores fundamental device theory, broadband noise analysis, profile optimization, 2-D/3-D simulation, compact modeling, and radiation effects. Current projects include Europa-surface mission electronics, D-band/sub-THz systems, and radiation-tolerant receiver designs. Analysis of his 15 most recent publications (2024-2025) reveals a dominant focus on radiation-hardened electronics for space applications (40% of works), millimeter-wave circuit design (30%), and SiGe HBT reliability optimization (30%). Key trends include Europa mission electronics development, D-band/sub-THz circuit innovation, and advanced radiation mitigation techniques using SiGe BiCMOS technology. Professor Cressler teaches multiple courses including ECE 3040 (Microelectronic Circuits), ECE 3450 (Semiconductor Devices), ECE 6444 (Silicon-Based Heterostructure Devices and Circuits), and the interdisciplinary IAC 2002 course on Science, Engineering and Religion. His research is supported by industrial collaborations and Georgia Tech facilities including the Georgia Electronic Design Center (GEDC), NanoTECH, and C-STAR.
John Heron is an Associate Professor in the Department of Materials Science and Engineering at the University of Michigan. His research focuses on epitaxial growth of complex oxide thin films and heterostructures to engineer new electronic phenomena for next-generation devices. B.S. in Physics, University of California, Santa Barbara (2007) M.S. in Materials Science and Engineering, University of California, Berkeley (2011) Ph.D. in Materials Science and Engineering, University of California, Berkeley (2013) His work explores ferroic materials like (anti)ferromagnets and (anti)ferroelectrics, utilizing techniques such as X-ray diffraction, scanning probe microscopy, and magnetotransport measurements. The Ferroelectronics Lab (http://ferroelectronicslab.com) employs in-situ transfer systems for high-quality oxide and metal growth. Recent publications emphasize magnetoelectric switching, entropy-stabilized oxides, and spintronic devices. Current teaching includes MSE500 Materials Physics and Chemistry. No explicit scientific awards or students are listed in the provided texts.
University of North Carolina at Chapel HillUnited States
Jinsong Huang serves as Adjunct Professor in the Materials Science and Engineering department at the University of North Carolina at Chapel Hill, where he leads an interdisciplinary research group focused on perovskite-based electronic materials and devices. His laboratory, housed in Murray Hall 1115, maintains active collaborations with academia, industry, and national laboratories while training next-generation scientists and engineers for competitive job markets. Dr. Huang earned his educational credentials through a rigorous academic path: Ph.D. in Materials Science & Engineering from UCLA (2007), M.S. in Semiconductor Physics from Chinese Academy of Sciences (2003), and B.E. in Materials and Photoelectronic Physics from Xiangtan University (2000). His research program spans Perovskite Solar Cells , Photodetectors , and X-ray Imagers , with particular emphasis on fundamental material physics, device design, stability enhancement, and scalable manufacturing. The group's work bridges applied research with deep scientific understanding, focusing on high-performance, low-cost electronic materials that address critical energy and medical imaging challenges. Current projects include self-powered photon-counting detectors, bifacial perovskite modules, and all-perovskite tandem solar cells. Analysis of recent publications reveals a strategic research trajectory toward commercialization of perovskite technologies, with increasing focus on stability, scalability, and real-world performance metrics. The work spans fundamental science (defect engineering, crystal growth) to applied technologies (medical imaging detectors, flexible solar cells), demonstrating remarkable breadth while maintaining technical depth in perovskite material systems. Highly Cited Researcher 2021 in Material Science and Chemistry Principal Investigator for $1.5 million UNC System Research Opportunities Initiative (2025) Multiple student/postdoc awards including Postdoctoral Awards for Research Excellence Consistent high-impact publications in Nature, Science, and Advanced Materials Huang actively mentors students and postdocs, with notable alumni including four of the 41 Tar Heels ranked as 'highly cited researchers' in December 2023. His research group has secured significant funding including the recent $1.5 million UNC System grant for 'Ultra-High Efficiency Perovskite Tandem Solar Cells' focusing on North Carolina's energy production and reduced fossil fuel dependence. The laboratory maintains strong industry partnerships that facilitate technology transfer and real-world implementation of research findings. The Huang Research Group operates as a dynamic interdisciplinary team with scientists from chemistry, materials science, physics, and electrical engineering backgrounds. Their collaborative culture has produced numerous breakthroughs including record-efficiency perovskite modules certified by NREL, self-powered photon-counting detectors published in Nature, and lead-recycling technologies highlighted in Nature Communications. Current facilities support crystal growth, device fabrication, and advanced characterization of perovskite materials for both energy and radiation detection applications.
Dr. Leland Nordin is an Assistant Professor at the University of Central Florida (UCF), with a joint appointment between the Department of Materials Science and Engineering and the College of Optics and Photonics (CREOL). He holds a BSc in Physics with honors from Grinnell College, followed by MSc and PhD degrees in Electrical and Computer Engineering from The University of Texas at Austin. His postdoctoral research was conducted at Stanford University’s Geballe Lab for Advanced Materials. Dr. Nordin’s research focuses on semiconductor materials and devices, particularly in nanostructuring techniques to enhance light-matter interactions. His lab specializes in ultra-wide band gap materials (e.g., III-Nitrides) for UVC lasers, LEDs, and detectors, as well as III-V semiconductor-based nanophotonic and heteroepitaxial devices. Key areas include mid-infrared optoelectronics, epitaxial growth, and high-performance photodetectors. He has received notable awards such as the 2025 Air Force Office of Scientific Research YIP Award, the 2024 Army Research Office ECP Award, and the 2022 Ben Streetman Prize. His lab advises graduate students in Optics and Physics PhD programs and has produced impactful work in semiconductor plasmonics and mid-infrared photonics.
Hari Nair is an Assistant Professor in the Department of Materials Science and Engineering at Cornell University, part of the College of Engineering. His research focuses on the synthesis and characterization of complex oxide thin films using molecular beam epitaxy (MBE), with applications in power electronics, quantum materials, and optoelectronics. B.Tech. in Engineering Physics, Indian Institute of Technology Madras, 2006 M.S. in Electrical and Computer Engineering, The University of Texas at Austin, 2008 Ph.D. in Electrical and Computer Engineering, The University of Texas at Austin, 2013 His research interests lie at the intersection of semiconductor physics, materials synthesis, and advanced functional materials. He specializes in epitaxial strain engineering, heterostructure design, and the control of electronic and magnetic properties in oxide thin films. His vision is to leverage novel materials to enable revolutionary advances in electronic and optoelectronic devices. Analysis of his recent publications reveals a strong focus on β-Ga₂O₃ for high-power devices and ruthenate-based quantum materials such as Sr₂RuO₄ and SrRuO₃. His work spans ultra-wide bandgap semiconductors, strain-engineered phase transitions, superconductivity, and spin-orbit phenomena. Techniques include MBE growth, THz spectroscopy, and advanced electron microscopy. Notable scientific awards include: Student Paper Award, Device Research Conference (DRC), 2013 The Ben Streetman Prize for Outstanding Research in Electronic and Photonic Materials and Devices, 2013 Student Paper Award, Electronics Materials Conference (EMC), 2012 Hari Nair has advised several graduate students and postdoctoral researchers, though specific names are not listed in the provided text. His work has been supported by grants from federal agencies and institutional programs focused on advanced materials and quantum science. He is actively involved in collaborative research through centers and labs at Cornell, particularly those related to materials synthesis and characterization. He leads a research group focused on the growth and study of epitaxial thin films, working closely with the D.G. Schlom group and other collaborators in the Kavli Institute at Cornell. His lab utilizes state-of-the-art MBE systems and advanced characterization tools for probing electronic, magnetic, and structural properties at the nanoscale.
Dr. Iftikhar Ahmad serves as an Assistant Professor in the Department of Electrical Engineering at the University of South Carolina's Molinaroli College of Engineering and Computing. He joined the faculty in 2018 after eight years in industry as a Senior Scientist developing ultra-wide bandgap materials for UV-LEDs, and prior post-doctoral and research professor roles at USC. His expertise lies in the growth and characterization of wide bandgap semiconductors for advanced electronic and optoelectronic applications. Dr. Ahmad earned his M.Sc. from Govt. College Lahore (ranking first in the state) and completed his M.S. and Ph.D. at Texas Tech University in 2003 and 2005, focusing on wide bandgap semiconductors. He furthered his training with post-doctoral work at Virginia Commonwealth University in MBE and MOCVD growth techniques. His educational background established the foundation for his current research in semiconductor materials engineering. His research centers on ultra-wide bandgap semiconductors, especially gallium oxide and boron nitride, for applications in deep UV LEDs and high-power electronics. He explores novel MOCVD growth methods for these materials and their integration with traditional III-nitrides (AlGaN) to advance device performance in optoelectronics and power electronics. Current projects focus on defect engineering, phase stabilization, and device fabrication for next-generation semiconductor technologies. Analysis of his recent publications reveals a strong emphasis on β-Ga2O3 and h-BN for next-generation devices. Key themes include MOCVD growth optimization, defect characterization, and device integration for radiation detectors, high-temperature transistors, and UV emitters. His work bridges materials science and electrical engineering to address critical challenges in wide bandgap semiconductor technology, with increasing focus on computational modeling and industrial applications. No scientific awards or fellowships were mentioned in the provided materials. Regarding advising, while specific students are not listed, Dr. Ahmad teaches core courses including Introduction to Microelectronics (ELCT 363) and Advanced Semiconductor Materials (ELCT 874), indicating active engagement in graduate and undergraduate education. Grant details are not specified, but his laboratory operations suggest external funding support for semiconductor research. Dr. Ahmad leads the Ultrawide Bandgap Semiconductor Laboratory, equipped with an MOCVD growth system, Oceanoptics spectrometer, and comprehensive characterization tools for electrical, optical, and atomic force microscopy. The lab supports research in materials growth, device fabrication, and testing, fostering innovation in semiconductor technology through collaborations with industry and government research programs.
Spyridon Pavlidis is an Associate Professor in the Department of Electrical and Computer Engineering at North Carolina State University, leading the Laboratory for Electronics in Advanced Devices and Systems (NCSU LEADS). He is affiliated with the ME Commons Hub (CLAWS), PowerAmerica, FREEDM, and ASSIST Research Centers. His research focuses on semiconductor devices, wide bandgap materials (GaN/AlN), and their applications in power electronics, sensing, and bioelectronics. Pavlidis holds a PhD from Georgia Tech (2016) and a Master's from Imperial College London (2010). Education: Ph.D. in Electrical and Computer Engineering, Georgia Institute of Technology (2016) M.Eng in Electrical and Electronic Engineering, Imperial College London (2010) His expertise spans power electronics packaging, microwave technologies, and biosensing. Recent work includes developing GaN and AlN-based devices for high-power and high-frequency applications. Pavlidis has received prestigious awards, including the 2022 NSF CAREER Award and the 2022 Bennett Faculty Fellowship. He actively contributes to IEEE committees and technical program reviews. His funded research includes defect-state analysis in GaN diodes and bioelectronic sensors for medical applications. Pavlidis collaborates across interdisciplinary teams, advancing next-generation semiconductor technologies and wearable biosensors.
Kexin Li is an Assistant Professor in the School of Electrical, Computer and Energy Engineering at Arizona State University since August 2023. She earned her Ph.D. in Electrical and Computer Engineering from the University of Illinois Urbana-Champaign in 2022, followed by a postdoctoral position at Columbia University. Education: Ph.D., Electrical and Computer Engineering, University of Illinois Urbana-Champaign (2022) M.Eng., Computer Engineering, New York University (2019) MSc., Analog and Digital IC Design, Imperial College London (2014) B.Eng., Electronic Science and Technology, Southeast University (2012) Her research focuses on semiconductor device physics and modeling for high-power, high-frequency applications, with particular expertise in wide bandgap materials like GaN. She develops frameworks for technology-circuit co-design that bridge nanoelectronics, device physics, and circuit implementation. Current work emphasizes cryogenic device modeling for quantum computing interfaces and ultra-wideband RF systems. Analysis of her recent publications reveals a strong focus on GaN HEMT characterization, device-circuit co-design methodologies, and cryogenic operation for quantum applications. Her work spans fundamental semiconductor physics, advanced TCAD simulation, and practical circuit implementation for next-generation communication systems. Scientific Recognition: Selected as 2022 EECS Rising Star Editor's Pick in Journal of Applied Physics (2022) for GaN HEMT modeling work Professor Li actively mentors graduate and undergraduate researchers, currently advising five Ph.D. students and four MS/UG students. Her research group collaborates with institutions including AFRL and focuses on creating a collaborative, diverse environment for developing new electronic materials and systems. She teaches courses including Analog and Digital Circuits (EEE 335) and Fundamentals of Solid-State Devices (EEE 436).
Patrick Fay is a Professor of Electrical Engineering at the University of Notre Dame and holds the Stinson Professorship of Nanotechnology. His primary research focuses on microwave, millimeter-wave, and power electronic devices, with applications in photovoltaics, energy conversion, and high-speed optoelectronics. He works in the Fitzpatrick Hall of Engineering and is affiliated with the High Speed Circuits & Devices Lab and the Notre Dame Nanofabrication Facility. Ph.D., Electrical Engineering, University of Illinois at Urbana-Champaign (1996) M.S., Electrical Engineering, University of Illinois at Urbana-Champaign B.S., Electrical Engineering, University of Notre Dame (1991) His research explores novel III-V semiconductor solar cells, GaN-based power transistors, and ultra-low-power heterostructure devices. He applies advanced fabrication techniques to improve performance in terrestrial/space photovoltaics and develops high-efficiency microwave components for wireless communications. Current projects include unconventional solar cell architectures for airborne applications. Prof. Fay has published over 400 journal/conference articles and 11 book chapters, with seven patents in semiconductor technology. He has received multiple teaching awards, including the College of Engineering’s Outstanding Teaching Award (2015) and dual Departmental awards (1998, 2018). His work spans energy-efficient electronics, smart grid systems, and transformative solar energy solutions. IEEE Fellow IEEE Electron Devices Society Distinguished Lecturer Outstanding Teaching Award (1998, 2015, 2018)
Srabanti Chowdhury is an Associate Professor of Electrical Engineering and Senior Fellow at the Precourt Institute for Energy at Stanford University. She holds a courtesy appointment in Materials Science and Engineering. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials, energy-efficient power/RF systems, and thermal management using diamond integration. She earned her M.S. (2008) and Ph.D. (2010) in Electrical and Computer Engineering from UC Santa Barbara. Key achievements include the 2023 Technical Excellence Award (SRC), 2020 Alfred P. Sloan Fellowship, and 2024 IEEE Fellow distinction. She has authored 120+ journal papers, 26 patents, and serves on IEEE committees like IRPS and VLSI Symposium. Her work addresses thermal boundary resistance in GaN/SiC-diamond interfaces and 3D thermal scaffolding for integrated circuits. She also explores vertical GaN power devices and monolithic bidirectional switches. Notable research directions include AI-driven thermal simulation pipelines, diamond-incorporated RF cooling, and high-voltage GaN PN diodes. Her contributions span semiconductor fabrication (e.g., MOCVD growth), interface engineering, and device-level thermal solutions for next-generation electronics.
Leonid Chernyak is a Professor in the Department of Physics at the University of Central Florida's College of Sciences. He received his PhD in Physics from Weizmann Institute of Science (Israel) in 1996 and joined UCF in 1999 after spending a year as a Research Associate at Colorado State University and Texas Tech University. Dr. Chernyak's research focuses on semiconductor physics, particularly wide bandgap semiconductors including Gallium Nitride (GaN), Zinc Oxide (ZnO), and Gallium Oxide (Ga2O3). His work centers on electron transport phenomena, radiation effects on semiconductors, and device characterization using techniques like electron beam induced current (EBIC) and cathodoluminescence. His research has significant applications in radiation-hardened electronics, power devices, and optoelectronics. His publication record shows a consistent research trajectory with over 100 publications spanning more than two decades, with recent work focusing increasingly on Ga2O3 as a promising ultra-wide bandgap semiconductor for next-generation power electronics. His articles demonstrate expertise in characterizing radiation damage and developing mitigation strategies through electron injection techniques. Scientific Awards 7 National Science Foundation Awards (2002-2021) 2 American Chemical Society Awards (2002-2021) 7 NATO Awards (2002-2021) 3 US-Israel Binational Science Foundation Awards (2002-2021) 3 Israel Ministry of Defense Awards (2002-2021) University of Central Florida Research Incentive Award (2004, 2015, 2021) Senior Member, Institute of Electrical and Electronics Engineers (IEEE) (1999) Minerva Award of German-Israeli Scientific Foundation (1992) Dr. Chernyak has served as a reviewer for numerous funding agencies, with 15 invitations to NSF panel reviews and 3 invitations to NATO panels between 2001-2020. His work has been recognized with an h-index of 28, and he has been included in various editions of Who's Who in America and Who's Who in Science and Engineering. His research has secured approximately $6 million in funding, demonstrating significant external recognition of his work's importance. He has also contributed 7 book chapters to the field, further establishing his expertise in semiconductor physics and materials characterization.
Rachel S. Goldman is a Professor at the University of Michigan with joint appointments in Materials Science & Engineering , Physics , and Electrical Engineering & Computer Science . She serves as the Maria Goeppert Mayer Collegiate Professor (2023–present) and Associate Director of Applied Physics (2010–present). Her research focuses on experimental materials science, particularly in semiconductor films, nanostructures, and heterostructures, with applications in quantum computing, spintronics, and optoelectronics. Education: B.S. in Physics, University of Michigan (1988) M.S. in Applied Physics, Cornell University (1992) Ph.D. in Materials Science, University of California, San Diego (1995) Research Interests: Goldman develops strategies for atomic manipulation in inorganic materials, emphasizing processing-structure-property correlations. Her work spans high-efficiency solar cells, long-wavelength light emitters, high-temperature electronics, and quantum computing, using ultra-high vacuum techniques like molecular-beam epitaxy and scanning tunneling microscopy, alongside computational modeling. Scientific Awards: Fellow of AAAS (2021), APS (2012), and AVS (2012) National Science Foundation Career Award (1998–2003) Peter Mark Memorial Award (2002) and MRS Graduate Student Gold Award (1994) Williams' Award (1988) and Alumni Giving Scholarship (1984) Advising and Grants: Goldman has advised numerous graduate students and led over 20 grants, including NSF MRSEC (2023–2029) and a DoD MURI project (2023–2026) on topological states in dislocations. She also chairs editorial roles for Journal of Applied Physics (2017–present) and serves on multiple national review panels.
