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John D. CresslerView profile

Professor

• Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBT)
• Mixed-Signal Semiconductor Devices
• RF and Microwave Circuit Design
• +5 more

Professor John D. Cressler is a tenured faculty member at the Georgia Institute of Technology, holding a position within the School of Electrical and Computer Engineering in the College of Engineering. His research focuses on cutting-edge semiconductor technologies, particularly silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for mixed-signal applications spanning RF, microwave, mm-wave, analog, and digital domains. His research interests center on atomic-scale bandgap engineering for next-generation semiconductor devices, with emphasis on SiGe HBT technology development, radiation-hardened circuits for space applications, cryogenic electronics, and device-circuit interactions. His team explores fundamental device theory, broadband noise analysis, profile optimization, 2-D/3-D simulation, compact modeling, and radiation effects. Current projects include Europa-surface mission electronics, D-band/sub-THz systems, and radiation-tolerant receiver designs. Analysis of his 15 most recent publications (2024-2025) reveals a dominant focus on radiation-hardened electronics for space applications (40% of works), millimeter-wave circuit design (30%), and SiGe HBT reliability optimization (30%). Key trends include Europa mission electronics development, D-band/sub-THz circuit innovation, and advanced radiation mitigation techniques using SiGe BiCMOS technology. Professor Cressler teaches multiple courses including ECE 3040 (Microelectronic Circuits), ECE 3450 (Semiconductor Devices), ECE 6444 (Silicon-Based Heterostructure Devices and Circuits), and the interdisciplinary IAC 2002 course on Science, Engineering and Religion. His research is supported by industrial collaborations and Georgia Tech facilities including the Georgia Electronic Design Center (GEDC), NanoTECH, and C-STAR.

Kaushik NayakView profile

Associate Professor

• Semiconductor Devices
• Mesoscopic Electronics
• Nanoelectronics
• +3 more

Kaushik Nayak is an Associate Professor in the Department of Electrical Engineering at the Indian Institute of Technology Hyderabad . His research spans semiconductor device physics, mesoscopic electronics, and electro-thermal effects in nanoscale transistors, with recent work on diamond MOSFETs, 2D material contacts, and thermal resistance in nano-sheet FETs. Ph.D., Indian Institute of Technology Bombay M. Tech., Microelectronics, IIT Bombay B.E., Electronics & Telecommunication, Utkal University He teaches advanced courses on semiconductor device modeling, mesoscopic electronics, and electromagnetic wave propagation. His publications focus on nanoelectronics, device variability, and high-temperature operations. Contact: knayak@ee.iith.ac.in .

Shimeng YuView profile

Professor

• Semiconductor Devices
• Non-Volatile Memories
• 3D Integration
• +5 more

Shimeng Yu is a full professor at the Georgia Institute of Technology's School of Electrical and Computer Engineering, holding the Dean’s Professorship. He earned his B.S. from Peking University (2009) and M.S./Ph.D. from Stanford University (2011/2013). His research focuses on semiconductor devices, non-volatile memories, 3D integration, and AI hardware accelerators. Yu leads SRC/DARPA JUMP 2.0 centers on memory/storage and 3D integration, with over 400 publications and 30,000+ citations (H-index 82). He serves on flagship conference committees (e.g., IEDM, VLSI) and editorial boards (IEEE EDL, JETCAS). Education: B.S., Microelectronics, Peking University (2009) M.S./Ph.D., Electrical Engineering, Stanford University (2011/2013) Research Themes: Emerging non-volatile memories for AI Monolithic 3D integration Energy-efficient computing systems His work spans device fabrication, circuit design, and system-level co-optimization. Recent projects are funded by NSF, DARPA, DOE, and industry partners (TSMC, Intel, Samsung), totaling >$17M. His lab, located at the Pettit Microelectronics Research Center, develops prototypes with cleanroom access. Awards: IEEE Fellow (2024) ACM/IEEE DAC Under-40 Innovators Award (2020) NSF CAREER Award (2016) Multiple editorship roles and distinguished lecturer appointments (IEEE EDS/CASS) Grants & Funding: Lead of two SRC/DARPA JUMP 2.0 centers Total research funding exceeds $17M

John D CresslerView profile

Professor

• Silicon-Germanium Microelectronics
• RF/Microwave Circuits
• Semiconductor Devices
• +3 more

John D. Cressler is a Regents Professor and Schlumberger Chair in Electronics at the Georgia Institute of Technology's School of Electrical and Computer Engineering. He earned his B.S. in Physics from Georgia Tech (1984) and Ph.D. in Applied Physics from Columbia University (1990). After pioneering SiGe research at IBM (1984-1992), he joined academia at Auburn University before moving to Georgia Tech in 2002. His research specializes in silicon-germanium heterojunction technology, with focuses on: RF/microwave/mm-wave circuits Radiation effects in electronics Cryogenic semiconductor behavior Device reliability physics Compact modeling for SiGe devices His 700+ publications demonstrate consistent innovation in SiGe HBT design, radiation-hardened circuits, and millimeter-wave systems. Recent work emphasizes radiation tolerance for space applications, high-frequency circuit optimization, and novel fabrication techniques. Major Awards: IEEE Fellow (2001) IEEE Leon K. Kirchmayer Graduate Teaching Award (2011) ONR Young Investigator Award (1994) IEEE Third Millennium Medal (2000) He leads Georgia Tech's SiGe research group with extensive industry collaborations and teaches courses including ECE 3040 (Microelectronic Circuits), ECE 6444 (SiGe Devices), and interdisciplinary courses on science/religion dialogue.

Arthur F WitulskiView profile

Research Professor

• Radiation Effects on Electronic Devices
• Power Semiconductor Reliability
• Space System Radiation Hardening
• +3 more

Arthur F Witulski is a Research Professor of Electrical Engineering at Vanderbilt University's School of Engineering. He specializes in radiation effects on electronic power semiconductor devices and systems, focusing on radiation reliability in aerospace and nuclear environments. His research addresses challenges in satellites, robotics, and high-reliability power electronics. Education: PhD, MS, and BS in Electrical Engineering from the University of Colorado. Research Interests include radiation hardening of power electronics, semiconductor reliability under ionizing environments, and system-level modeling of radiation effects. His work spans energy systems, nano-materials, and risk mitigation strategies for complex engineering projects. Key contributions include developing models for SiC power device failures, Bayesian assurance frameworks for space systems, and methodologies linking component-level testing to system reliability. His recent articles emphasize single-event effects in advanced semiconductors and radiation tolerance in commercial-off-the-shelf (COTS) components. Witulski has pioneered radiation assurance tools for small satellites and robotic systems, emphasizing probabilistic modeling and fault-tolerant designs. His work integrates theoretical physics with practical engineering solutions for harsh radiation environments.

Andrew SternbergView profile

Adjunct Assistant Professor

• Single-Event Effects
• Radiation Hardness
• Semiconductor Device Testing
• +3 more

Andrew Sternberg is an Adjunct Assistant Professor of Electrical Engineering at Vanderbilt University's School of Engineering. He holds a B.S. in Engineering Science from Lipscomb University (1999), and M.S. and Ph.D. in Electrical Engineering from Vanderbilt University (2003 and 2006). He works at the Institute for Space and Defense Electronics (ISDE) as a Research Engineer and focuses on single-event effect testing in semiconductor devices, radiation-hardened circuit design, and analog/mixed-signal systems. His research spans single-event burnout in Ga2O3 and SiC devices, pulsed-laser-induced testing methodologies, and radiation effects in nanoscale FinFETs. Notable contributions include over 100 peer-reviewed publications on semiconductor radiation tolerance, including work on the RadFxSat-2 space mission to study microelectronics in orbit. Key research areas include: Cyber-physical systems reliability Risk assessment for radiation environments Space and defense electronics hardening His recent articles (2023–2025) emphasize: SiC power device radiation tolerance Advanced laser-based testing techniques Failure mechanisms in wide-bandgap semiconductors He collaborates with NASA and industry partners on radiation-effects mitigation strategies for aerospace applications.

Steven R. SpurgeonView profile

Associate Professor

• AI-driven materials discovery and design
• Interface science
• Electron microscopy
• +3 more

Steven R. Spurgeon is a Senior Materials Data Scientist at the National Renewable Energy Laboratory (NREL) and holds an Affiliate Associate Professor position in Physics at the University of Washington (2021–2024). His pioneering work focuses on AI-driven materials discovery, electron microscopy, and interface science, with recognition through awards from the Materials Research Society and Microscopy Society of America. Education: PhD in Materials Science and Engineering, Drexel University Bachelor's in Materials Science and Engineering, Carnegie Mellon University Research Focus: Leads teams developing autonomous systems for materials discovery in extreme environments, computer vision for microelectronics analysis, and multimodal AI approaches for accelerated materials design. His work bridges fundamental interface science with applications in energy storage and radiation-hardened technologies. Honors & Activities: Editor for Microscopy and Microanalysis journal Member: American Physical Society, Materials Research Society, Microscopy Society of America Founding member of The Community for Autonomous Scientific Experimentation Leadership: Spearheads NREL's electron microscopy capabilities and industry partnerships transforming AI-guided materials research for sustainable technology solutions.

• Microelectronics
• Radiation Effects on Electronics
• Semiconductor Reliability
• +3 more

Jean-Luc Autran is an Exceptional University Professor (PRCE2) at Aix-Marseille University, affiliated with the Department of Detection, Radiation and Reliability (DETECT) within the Faculty of Sciences. Since July 2023, he has been temporarily assigned to the University of Rennes for managerial roles. His research focuses on radiation effects in microelectronics, particularly soft errors caused by atmospheric neutrons, muons, protons, and terrestrial radiation in nanoscale devices. Key Research Areas: Microelectronics Reliability, Single-Event Effects, Atmospheric Radiation, Neutron Interactions, Muon Physics, Radiation-Hardened Design. Scientific Leadership: As an Honorary Member of the Institut Universitaire de France (since 2003), he leads multidisciplinary efforts from radiation metrology to multi-physics circuit simulation via tools like GEANT4, SRIM, and NGSPICE. His work spans 25+ years, evolving from quantum transport in nano-MOSFETs (1998-2008) to atmospheric radiation effects (2005-present). Recent Contributions: 2025 studies on ultrawide-bandgap semiconductors, deep learning-based radiation simulations, and JET Tokamak neutron experiments. He pioneers a multi-scale Single-Event Effect simulation framework for decananometer CMOS, integrating particle physics, device modeling, and system-level error rate prediction. Scientific Awards: Honorary Member, Institut Universitaire de France (2003 class). Educational Impact: Teaches graduate courses in quantum mechanics simulation, nanoelectronics reliability, and radiation detection at Aix-Marseille University, with lectures delivered in English for international audiences.

Paula López MartínezView profile

Professor

• Computer Vision
• Electronic Design of Intelligent Devices
• Energy Harvesting
• +4 more

Paula López Martínez is a Full Professor at the University of Santiago de Compostela (USC) and Deputy Director of the Singular Research Centre on Intelligent Technologies (CiTIUS) . Since June 2024, she has held the Televés Microelectronics Chair at USC. Her work bridges Computer Vision and Electronic Design of Intelligent Devices , with a focus on CMOS Image Sensors and Biomedical Applications . Her research spans Energy Harvesting , Device Modeling , and Low-Power Embedded Systems . Key projects include SEMIoTICS (low-power AI at the edge), MISEL (multispectral vision), and NANOEATERS (nanotechnology transfer). She has authored over 100 peer-reviewed papers and served in IEEE leadership roles, including Secretary of the Sensory Systems Technical Committee and Treasury of IEEE Women in Engineering Spain (2006–2008). Recent publications highlight Analog Computing-In-Memory , HDR CMOS Sensors , and Energy-Efficient DC-DC Converters . Her work integrates Photovoltaic Energy Harvesting with Biomedical Device Design , emphasizing Self-Powered Systems and Dynamic Vision Sensors . She employs Verilog-AMS and ATLAS Simulations for CMOS Photodiode Modeling , addressing Crosstalk and Shot Noise in pixel arrays. Notable collaborations include Victor M. Brea, Diego Cabello, and Miguel Heredia Conde. She contributes to IEEE Transactions and Q1-Ranked Journals , with a focus on Hardware Acceleration via FPGA and Custom IC Design . Her expertise spans Thermoelectric Generators , Smart Energy Systems , and Radiation-Hard Transistors .

• Semiconductor Devices
• Radiation Hardness
• CMOS Sensors
• +3 more

Dr Samuel Powell is an active researcher specializing in semiconductor sensor technology for high-radiation environments. His work focuses on advanced HV-CMOS pixel sensors, including the RD50-MPW4 and UKRI-MPW series, aimed at improving radiation tolerance and detector granularity. Collaborations: RD50 Collaboration, UKRI projects Core Expertise: Radiation-hard CMOS design, pixel sensor engineering Research interests revolve around high-voltage semiconductor devices and their applications in particle physics detectors . His recent work explores backside biasing techniques, time walk compensation circuits, and monolithic sensor architectures. Scientific contributions include 5 publications between 2024-2025 in leading journals like Journal of Instrumentation and Nuclear Instruments and Methods . These studies emphasize radiation damage mitigation, sensor simulations, and performance characterization under extreme conditions. Current affiliations appear to focus on detector R&D, though institutional details are unspecified in the text. No awards, grants, or student advisement data are mentioned.

• Electronics Engineering
• Semiconductor Devices
• Radiation Detectors
• +4 more

LODOVICO RATTI is a Full Professor of Electronics at the University of Pavia's Department of Electrical, Computer and Biomedical Engineering. He leads the Electronic Instrumentation Group and Laboratory, and holds roles such as Secretary of the IEEE Radiation Instrumentation Steering Committee and Chair of the IEEE Nuclear and Plasma Sciences Italy Section. His research focuses on low-noise analog circuits for radiation detectors, semiconductor device noise characterization, and radiation effects in microelectronics. He has contributed to major international projects including CMS, RD53, and PixFEL, developing pixel detectors for high-luminosity environments. His work spans technologies like CMOS, JFET, and SPADs, with emphasis on radiation hardness and detector optimization. Ratti has authored over 300 publications (h-index 24), and has led teaching initiatives in Electronics and Industrial Measurements. He also serves on editorial boards and conference committees, advancing both academic and applied research in his field. Key collaborations include CERN, Fermilab, and Argonne National Laboratory. His research impacts particle physics, synchrotron light sources, and medical imaging through innovations in detector design and radiation tolerance. Current projects include 28 nm CMOS front-ends for future colliders and pixel sensor upgrades for Belle II and FCC-ee experiments.

• Gallium Nitride (GaN)
• β-Ga2O3 Semiconductors
• Power Electronics
• +3 more

Dr. Matthew D Smith is a Senior Lecturer at the School of Physics, University of Bristol , specializing in wide bandgap semiconductor devices. His research focuses on gallium nitride (GaN) and gallium oxide (β-Ga₂O₃) technologies for power electronics and radiofrequency applications. Academic Rank: Senior Lecturer Key Research Areas: GaN/β-Ga₂O₃ devices, semiconductor defects, power transistor reliability Email: matt.smith@bristol.ac.uk His recent work explores breakdown mechanisms in β-Ga₂O₃ trench Schottky diodes, multichannel device architectures, and thermal management solutions for GaN electronics. Articles span topics from carrier transport to radiation-hardened HEMTs , emphasizing device stability and performance optimization. Current projects include the VertiGaN initiative (funded by EP/X014924/1), aiming to develop vertical GaN-on-Si membrane power transistors for mass-market applications. The project has attracted significant industry attention and media coverage.

• Radiation Detectors
• Silicon Sensors
• CMOS Image Sensors
• +7 more

Gian Franco Dalla Betta is a Full Professor at the Department of Industrial Engineering, University of Trento, and Deputy Coordinator of the Doctoral Programme in Materials, Mechatronics and Systems Engineering. His work focuses on silicon radiation detectors, CMOS image sensors, and microelectronics for high-energy physics and medical imaging applications. Secondary School Degree, Pio X Institute, Treviso (1985) M.Sc. in Electronic Engineering, University of Bologna (1992) Ph.D. in Materials, Technologies and Electronic Devices, University of Trento (1997) His research spans: Radiation detector design (PIN diodes, strip/pixel detectors, 3D sensors, LGADs) CMOS photodetectors (SPADs, SiPMs, CAPD) Radiation damage modeling and mitigation Hybrid neutron detectors and active-edge terminations Recent publications highlight advancements in 3D sensor design for timing applications, LGADs for particle tracking, and CMOS SPAD arrays. Key subfields include radiation hardness, charge multiplication, and TCAD-aided process optimization. Scientific recognition includes the IEEE Transactions on Nuclear Science 2025 Best Paper Award . His work has been instrumental in detector production for CERN experiments like ATLAS and ALICE. At ITC-IRST (now FBK), he pioneered silicon fabrication processes for radiation detectors and contributed to international collaborations such as INFN and CMS upgrades.

• Avalanche Photodetectors
• CMOS Image Sensors
• Integrated Circuit Design
• +7 more

Lucio Pancheri is an Associate Professor at the Department of Industrial Engineering , University of Trento. His research focuses on semiconductor devices, CMOS sensors, and radiation detection technologies. 1996: Scientific School Certificate at Liceo 'B. Russell', Italy 2002: M.S. in Materials Engineering, University of Trento (cum laude) 2006: PhD in Information and Communication Technologies, University of Trento Research Interests: Design and characterization of silicon photodetectors for high-resolution radiation detection, SPADs in CMOS for time-resolved imaging, and fully depleted CMOS sensors for medical and particle physics. Collaborates with INFN, FBK, and international institutions. Key Article Trends: Recent work emphasizes 4D particle tracking , radiation hardness in advanced CMOS, and hybrid perovskite/organic detectors . Applications span medical imaging , high-energy physics , and flexible electronics . Scientific Roles & Awards: IEEE Senior Member (2022) Chair, IEEE IEDM ODI Subcommittee (2023) Technical Committee, IEEE IEDM (2021-2022) Associate Editor, IEEE Transactions on Electron Devices (2018-present) Collaborations & Projects: Leads the ARCADIA project for customized fully depleted CMOS processes. Works with University of Munich on hybrid CMOS-organic sensors and integrates detectors for UAV-based radiation monitoring ( DRAGoN ).

Tomislav SuligojView profile

Professor

• Microelectronics
• Semiconductor Devices
• RF Circuit Design
• +3 more

Tomislav Suligoj is a Full Professor at the Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing (FER) at the University of Zagreb. His research focuses on advanced semiconductor devices including horizontal current bipolar transistors (HCBT), single-photon avalanche diodes, and GaN-based high-electron-mobility transistors. Research areas include: Microelectronics, Semiconductor Device Physics, RF Circuit Design, Photodiode Optimization, FinFET Technology, and Gallium Nitride Transistors Key technologies: HCBT (low-cost BiCMOS integration), PureB SPADs (dark count suppression), GaN HEMTs (high 2DEG density), and MALTA architecture (radiation-tolerant sensors) His recent publications analyze: Ultra-low dark count SPADs in 180 nm CMOS Cryogenic temperature performance of HCBT devices Ballistic transport in phosphorene nanoribbon FETs Radiation-hard sensors for ATLAS High Luminosity LHC Advanced mobility modeling in ultra-thin InGaAs channels Stress effects in FinFET structures