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Professor Shubhra Pasayat is affiliated with the Department of Electrical and Computer Engineering and Materials Science & Engineering at the University of Wisconsin-Madison. She holds a PhD (2021) and MS (2017) from University of California, Santa Barbara, and a B.Tech (2013) from Indian Institute of Technology Kharagpur. Research focus: MOCVD growth of III-nitrides/oxides for optoelectronics, power electronics, quantum materials, and bio-photonics Key applications: LEDs, LASERs, HEMTs, bio-photonics, and sanitization technologies Her research interests center on wide bandgap semiconductor materials, particularly group-III nitrides and oxides. She works on strain relaxation techniques using porous GaN substrates, quantum dot engineering for visible light emission, and high-voltage GaN HEMT development. Current projects include lattice engineering for improved crystal quality and thermal management in RF devices. Publications highlight advancements in ultraviolet lasers, high-electron-mobility transistors, and micro-LEDs. Her work spans fundamental material studies and device optimization for industrial applications like electric vehicles, 5G/6G communications, and horticultural lighting. 2024 Awards : NSF CAREER, ONR DEPSCoR, WARF Early Career Innovator 2022 Awards : UCSB ECE Outstanding Dissertation, JAP Best Paper She teaches ECE 235 Introduction to Solid State Electronics and mentors research at both graduate and undergraduate levels.

• Semiconductor Materials
• Optoelectronics
• Power Electronics
• +3 more

Jung Han is the William A. Norton Professor of Electrical & Computer Engineering at Yale University, affiliated with the School of Engineering & Applied Science. He holds a Ph.D. from Purdue University and leads the Optoelectronics Materials and Devices Group, focusing on interdisciplinary research in III-nitride semiconductors, optoelectronics, and power electronics. His work bridges fundamental materials science with practical applications in solid-state lighting, energy harvesting, and next-generation electronics. Research interests include wide-bandgap semiconductor materials (e.g., GaN), nanoscale device fabrication, and epitaxial growth techniques. He pioneered nanoporous GaN distributed Bragg reflectors (DBRs) for high-efficiency LEDs and lasers, as well as selective-area growth methods for power electronics. His lab explores green energy technologies, flexible electronics, and hybrid organic-inorganic semiconductors. Publications emphasize advancements in GaN-based vertical-cavity surface-emitting lasers (VCSELs), SWIR detectors, and micro-LED displays. Recent work addresses challenges in defect control, scalability of III-nitride devices, and integration with emerging materials. His group collaborates across engineering, applied physics, and chemistry to advance sustainable energy and high-performance optoelectronics. Notable contributions include wafer-level integrated white-LEDs with quantum dots, damage-free in-situ GaN etching via TBCl, and stacking-fault-free GaN growth on foreign substrates. His research has been recognized in high-impact journals like Advanced Materials and Applied Physics Letters .

• Wide bandgap semiconductor materials
• Optoelectronic devices
• Nanoscale materials and devices
• +4 more

James S. Speck is the Seoul Viosys Professor of Solid State Lighting in the Department of Materials at the University of California, Santa Barbara (UCSB), within the College of Engineering. His research focuses on the materials science of wide bandgap semiconductors such as GaN and β-Ga₂O₃, emphasizing epitaxial growth, defect engineering, and device applications. He holds over 725 publications and has co-founded Soraa, a company commercializing GaN-based lighting technologies. Education: Sc.D. in Materials Science (MIT), S.M. in Metallurgy (MIT), B.Sc.Eng (University of Michigan). Research Interests: GaN-based semiconductors, nitride materials, epitaxial growth mechanisms, nonpolar/semipolar GaN, and β-Ga₂O₃. His work addresses threading dislocations, defect dynamics, and optoelectronic device performance. Awards: IEEE Photonics Society Aron Kressel Award, APS Fellowship, MRS Fellowship, and multiple best paper awards. Key Contributions: Pioneered MBE growth of GaN, developed V-defect engineering for LEDs, and advanced β-Ga₂O₃ research. Collaborates on Soraa’s high-brightness LED technologies. Lab/Teams: The Speck Group studies GaN heterostructures, defect mitigation, and wide bandgap semiconductor applications. Recent work includes V-defect-controlled LEDs and β-Ga₂O₃ etching techniques.

• Electronic and Photonic Materials
• Wide Bandgap Semiconductors
• GaN-Based Semiconductors
• +3 more

Dr. Hongxing Jiang is a Professor at the Whitacre College of Engineering, Texas Tech University, affiliated with the Department of Electrical & Computer Engineering. He holds the Edward E. Whitacre Jr. Chair and co-directs the Center for Nanophotonics. PhD in Physics, Syracuse University (1986) MS in Physics, Syracuse University (1983) BS in Physics, Fudan University (1981) His research focuses on III-Nitride semiconductors (BN, AlN, GaN, InN) for optoelectronics , photonics , and radiation detection . Key areas include solid-state lighting , energy-conversion devices , MOCVD growth , and micro-emitter arrays . Recent publications highlight advancements in h-BN quasi-bulk crystals , fast neutron detectors , and wide bandgap materials . Themes span crystal growth optimization , doping techniques , and optical characterization . National Academy of Inventors Fellow (2018) American Association for the Advancement of Science Fellow (2016) International Society for Optics and Photonics Fellow (2015) Optica Fellow (2014) American Physical Society Fellow (2010) China-U.S. Physics Examination and Application Fellow (1981) As co-director of the Center for Nanophotonics, Jiang leads research in semiconductor materials for high-energy lasers and neutron detection , emphasizing scalable growth methods like hydride vapor-phase epitaxy .

• Semiconductors
• Photonics
• Optoelectronics
• +6 more

Lincoln J. Lauhon is a Professor of Materials Science and Engineering at Northwestern University. His research focuses on nanoscale structure-property relationships in low-dimensional materials, emphasizing synthesis, characterization, and device applications. He leads the Lauhon Research Group, which explores nanowires, 2D semiconductors, and heterostructures for quantum computing, high-power electronics, and energy conversion. Lauhon holds significant recognition including the Camille Dreyfus Teacher-Scholar Award (2008) and National Science Foundation CAREER Award (2005). His work bridges fundamental materials science with practical technologies through advanced microscopy and modeling techniques. Education: Postdoc in Chemistry at Harvard University, Ph.D. in Physics from Cornell University, and B.S. in Physics (Honors) from the University of Michigan. Research interests span nanowire synthesis, 3D nanotomography, scanning probe microscopy, and computational modeling. Current projects include III-As-Sb nanowire networks for quantum computing, GaN diodes for power electronics, and ferroelectric 2D materials. Lauhon's lab emphasizes collaboration across disciplines, with contributions to high-impact journals like Science Advances and Nano Letters . Awards highlight his dual excellence in teaching and research, including the Teacher of the Year award (2006). Professional service includes leadership roles in the Materials Research Society and organizing conferences on electronic materials. His team's innovations include novel nanomaterial synthesis methods and device architectures, with applications in computing, energy, and optoelectronics. The group actively engages in graduate and undergraduate training, fostering future leaders in nanotechnology.

• Nanomaterials Engineering
• Quantum Computing Materials
• Semiconductor Devices
• +4 more

Hari Nair is an Assistant Professor in the Department of Materials Science and Engineering at Cornell University, part of the College of Engineering. His research focuses on the synthesis and characterization of complex oxide thin films using molecular beam epitaxy (MBE), with applications in power electronics, quantum materials, and optoelectronics. B.Tech. in Engineering Physics, Indian Institute of Technology Madras, 2006 M.S. in Electrical and Computer Engineering, The University of Texas at Austin, 2008 Ph.D. in Electrical and Computer Engineering, The University of Texas at Austin, 2013 His research interests lie at the intersection of semiconductor physics, materials synthesis, and advanced functional materials. He specializes in epitaxial strain engineering, heterostructure design, and the control of electronic and magnetic properties in oxide thin films. His vision is to leverage novel materials to enable revolutionary advances in electronic and optoelectronic devices. Analysis of his recent publications reveals a strong focus on β-Ga₂O₃ for high-power devices and ruthenate-based quantum materials such as Sr₂RuO₄ and SrRuO₃. His work spans ultra-wide bandgap semiconductors, strain-engineered phase transitions, superconductivity, and spin-orbit phenomena. Techniques include MBE growth, THz spectroscopy, and advanced electron microscopy. Notable scientific awards include: Student Paper Award, Device Research Conference (DRC), 2013 The Ben Streetman Prize for Outstanding Research in Electronic and Photonic Materials and Devices, 2013 Student Paper Award, Electronics Materials Conference (EMC), 2012 Hari Nair has advised several graduate students and postdoctoral researchers, though specific names are not listed in the provided text. His work has been supported by grants from federal agencies and institutional programs focused on advanced materials and quantum science. He is actively involved in collaborative research through centers and labs at Cornell, particularly those related to materials synthesis and characterization. He leads a research group focused on the growth and study of epitaxial thin films, working closely with the D.G. Schlom group and other collaborators in the Kavli Institute at Cornell. His lab utilizes state-of-the-art MBE systems and advanced characterization tools for probing electronic, magnetic, and structural properties at the nanoscale.

• Materials Synthesis and Processing
• Semiconductor Physics and Devices
• Advanced Materials
• +12 more

Dr. Iftikhar Ahmad serves as an Assistant Professor in the Department of Electrical Engineering at the University of South Carolina's Molinaroli College of Engineering and Computing. He joined the faculty in 2018 after eight years in industry as a Senior Scientist developing ultra-wide bandgap materials for UV-LEDs, and prior post-doctoral and research professor roles at USC. His expertise lies in the growth and characterization of wide bandgap semiconductors for advanced electronic and optoelectronic applications. Dr. Ahmad earned his M.Sc. from Govt. College Lahore (ranking first in the state) and completed his M.S. and Ph.D. at Texas Tech University in 2003 and 2005, focusing on wide bandgap semiconductors. He furthered his training with post-doctoral work at Virginia Commonwealth University in MBE and MOCVD growth techniques. His educational background established the foundation for his current research in semiconductor materials engineering. His research centers on ultra-wide bandgap semiconductors, especially gallium oxide and boron nitride, for applications in deep UV LEDs and high-power electronics. He explores novel MOCVD growth methods for these materials and their integration with traditional III-nitrides (AlGaN) to advance device performance in optoelectronics and power electronics. Current projects focus on defect engineering, phase stabilization, and device fabrication for next-generation semiconductor technologies. Analysis of his recent publications reveals a strong emphasis on β-Ga2O3 and h-BN for next-generation devices. Key themes include MOCVD growth optimization, defect characterization, and device integration for radiation detectors, high-temperature transistors, and UV emitters. His work bridges materials science and electrical engineering to address critical challenges in wide bandgap semiconductor technology, with increasing focus on computational modeling and industrial applications. No scientific awards or fellowships were mentioned in the provided materials. Regarding advising, while specific students are not listed, Dr. Ahmad teaches core courses including Introduction to Microelectronics (ELCT 363) and Advanced Semiconductor Materials (ELCT 874), indicating active engagement in graduate and undergraduate education. Grant details are not specified, but his laboratory operations suggest external funding support for semiconductor research. Dr. Ahmad leads the Ultrawide Bandgap Semiconductor Laboratory, equipped with an MOCVD growth system, Oceanoptics spectrometer, and comprehensive characterization tools for electrical, optical, and atomic force microscopy. The lab supports research in materials growth, device fabrication, and testing, fostering innovation in semiconductor technology through collaborations with industry and government research programs.

• Wide Bandgap Semiconductors
• Ultra-Wide Bandgap Semiconductors
• MOCVD Growth
• +5 more

Professor Michael Thompson is a tenured faculty member in the Department of Materials Science and Engineering at Cornell University's College of Engineering. He holds the Dwight C. Baum Professorship in Engineering and specializes in advanced materials processing, particularly semiconductor materials under pulsed laser exposure. His research focuses on transient thermal processing (nanosecond to sub-second timescales) for material property modification and characterization, with applications in semiconductors, EUV lithography, and photonic materials. Thompson has authored over 120 papers and 20 patents, emphasizing industrial challenges like front-end junction formation and flexible electronics. Education: B.S. in Physics (CalTech, 1979), M.S./Ph.D. in Physics (Cornell, 1982/1984). He has received prestigious awards including the North American Award for Technical Contribution to the Semiconductor Industry (2009), multiple Cornell Excellence in Teaching Awards, and the Stephen H. Weiss Presidential Fellow designation (2021). His teaching focuses on thermodynamics and electronic properties, with a commitment to making abstract concepts accessible through real-world examples. Service: Leads curriculum development, ABET accreditation, and industry outreach. His lab develops novel methods for autonomous materials discovery using AI-driven approaches. Current projects include laser spike annealing for semiconductor doping and high-throughput synthesis of metastable materials.

• Semiconductor Physics
• Materials Science
• Laser Processing
• +7 more

Wenjuan Zhu is an Associate Professor in the Department of Electrical and Computer Engineering, Materials Science and Engineering, and the Micro and Nanotechnology Lab at the University of Illinois at Urbana-Champaign. She holds the W.J. "Jerry" Sanders III - Advanced Micro Devices Inc. Scholar distinction and serves as Associate Head for Graduate Programs. Her research focuses on nanotechnology, ferroelectric materials, and semiconductor devices, particularly in 2D materials and their applications in electronics and reconfigurable logic circuits. Key research areas include van der Waals heterostructures, ferroelectric transistors, and high-temperature electronics. She has received prestigious awards such as the DARPA Young Faculty Award (2020), IBM Faculty Award (2018), and NSF CAREER Award (2017). Her work bridges fundamental materials science with device engineering, advancing next-generation electronic systems. Notable contributions include non-volatile reconfigurable transistors, wafer-scale MoTe₂ growth, and ferroelectric field-effect transistors. Her research emphasizes scalable synthesis methods and industrial applicability of 2D materials. Collaborations span global institutions, reflecting her impact in nanoelectronics and materials innovation.

• Nanotechnology
• Ferroelectric Materials
• 2D Materials
• +3 more

Srabanti Chowdhury is an Associate Professor of Electrical Engineering and Senior Fellow at the Precourt Institute for Energy at Stanford University. She holds a courtesy appointment in Materials Science and Engineering. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials, energy-efficient power/RF systems, and thermal management using diamond integration. She earned her M.S. (2008) and Ph.D. (2010) in Electrical and Computer Engineering from UC Santa Barbara. Key achievements include the 2023 Technical Excellence Award (SRC), 2020 Alfred P. Sloan Fellowship, and 2024 IEEE Fellow distinction. She has authored 120+ journal papers, 26 patents, and serves on IEEE committees like IRPS and VLSI Symposium. Her work addresses thermal boundary resistance in GaN/SiC-diamond interfaces and 3D thermal scaffolding for integrated circuits. She also explores vertical GaN power devices and monolithic bidirectional switches. Notable research directions include AI-driven thermal simulation pipelines, diamond-incorporated RF cooling, and high-voltage GaN PN diodes. Her contributions span semiconductor fabrication (e.g., MOCVD growth), interface engineering, and device-level thermal solutions for next-generation electronics.

• Wide Bandgap Semiconductors
• Thermal Management
• Power Electronics
• +3 more

Bradley Fahlman is a Professor in the Department of Chemistry and Biochemistry at Central Michigan University (CMU), College of Science and Engineering. His research focuses on the synthesis and application of nanostructured materials for energy, electronics, and sensing technologies. He actively leads the Fahlman Lab, which develops novel precursors and deposition techniques for advanced materials. Education: Postdoctoral, University of California, Irvine (2000–2002) Ph.D. in Inorganic Chemistry, Rice University (2000) B.S. in Chemistry, University of Regina, Saskatchewan, Canada (1996) Dr. Fahlman's research interests center on materials chemistry, particularly in the design of 0-D, 1-D, and 2-D nanomaterials. Key areas include atomic layer deposition (ALD) of high-k dielectric films using novel hafnium complexes, development of graphene nanoribbons and carbon-based materials for Li-ion battery anodes, quantum dot sensitized solar cells, and silicon nanowire growth via solid-liquid-solid mechanisms. His work bridges synthetic chemistry with materials engineering and energy applications. The most recent publications reflect a strong focus on nanomaterials for energy storage (graphene, carbon nanotubes, MoS2), thin-film deposition precursors (Hf, Ge), luminescent materials, and porous silicon sensors. His research spans inorganic synthesis, materials characterization, and electrochemical applications, with consistent contributions to both fundamental chemistry and applied materials science. Scientific Awards: IUPAC Young Observer, Istanbul, Turkey (2013) National Textbook Excellence Award for Materials Chemistry (2008) CMU Provost’s Award for Research Excellence (2005) CMU Research Excellence Fund Award (2003) Dr. Fahlman has secured research funding from the National Science Foundation (NSF) and the Department of Defense (TARDEC) for projects on ALD precursors and Li-ion battery materials. He collaborates with physicists such as Veronica Barone on theoretical and experimental studies of carbon nanostructures. He advises graduate students and contributes to chemical education, investigating study habits and personality traits in chemistry students. He teaches General Chemistry, Inorganic Chemistry, and Materials Chemistry. His lab is equipped with an in-house ALD system featuring real-time thickness monitoring via a high-temperature quartz crystal microbalance. The Fahlman Lab emphasizes interdisciplinary research, combining synthetic chemistry, materials characterization, and device integration for next-generation technologies in energy and electronics.

• Materials Chemistry
• Nanomaterials
• Atomic Layer Deposition
• +9 more

Steven DenBaars is a Professor of Materials and Electrical & Computer Engineering at the University of California, Santa Barbara (UCSB), where he holds the Mitsubishi Chemical Chair in Solid State Lighting and Displays. He serves as Director of the Institute for Energy Efficiency and Executive Director of the Solid State Lighting and Energy Electronics Center (SSLEEC). PhD, Electrical Engineering, University of Southern California BS, Materials and Metallurgical Engineering, University of Arizona MS, Materials Science, University of Southern California His research revolves around the growth and application of wide-bandgap (GaN-based) semiconductors for blue LEDs, laser diodes, high-power electronics, and quantum technologies. Key areas include MOCVD of III-V compound materials, strain engineering, and device fabrication. Recent publications highlight advancements in GaN-based microLEDs for quantum random number generation, UV LED efficiency, laser diode design, and strain relaxation techniques. Subfields span tunnel junctions, V-defect engineering, and metasurface light-emitting structures. 2021 ISCS Quantum Devices Award 2010 IEEE Photonics Society Aron Kressel Award 2008 JSAP Outstanding Paper Award 2005 IEEE Fellow 2014 National Academy of Inventors Fellow 2021 Central Coast Innovation Award Member, U.S. National Academy of Engineering He has co-founded four compound semiconductor companies (Nitres, Soraa, SLD Laser, Akoustis) and holds over 150 U.S. patents. His research group at UCSB includes 11 graduate students and postdocs focusing on III-nitride materials for optoelectronics and quantum applications. DenBaars leads the SSLEEC, a multidisciplinary lab advancing solid-state lighting and energy-efficient electronics through semiconductor innovation.

• Semiconductor Technology
• Materials Science
• Photonics
• +4 more

Deep Jariwala is an Associate Professor and the Peter and Susanne Armstrong Distinguished Scholar at the University of Pennsylvania, with primary appointment in the Department of Electrical and Systems Engineering and secondary affiliation in Materials Science and Engineering. He serves as the Undergraduate Chair for ESE and leads the Device Research and Engineering Laboratory. Dr. Jariwala's research focuses on nanometer and atomic scale devices, materials and interfaces for computing, sensing, information technology, and renewable energy applications. His interdisciplinary work bridges Electrical Engineering, Materials Science, Condensed Matter Physics, Optics, and Physical Chemistry. Key research areas include nanoelectronics, nanophotonics, 2D materials (particularly transition metal dichalcogenides), ferroelectric devices (especially AlScN-based systems), and advanced nanofabrication techniques. His laboratory investigates fundamental properties while developing practical device applications. Analysis of Dr. Jariwala's recent publications (2023-2025) reveals a strong emphasis on wafer-scale 2D materials growth, ferroelectric memory devices, and high-temperature electronics. His work spans from fundamental materials science to device applications, with particular focus on selector-free memory architectures, high-temperature operation (>500°C), and novel approaches to doping and contact engineering in 2D semiconductor devices. Recent trends show increasing emphasis on AI hardware and energy-efficient computing paradigms. Dr. Jariwala has been recognized with the Peter and Susanne Armstrong Distinguished Scholar award for his research contributions. As an academic advisor, Dr. Jariwala mentors undergraduate, graduate, and postdoctoral researchers in his laboratory. His team develops expertise in semiconductor processing, thin film deposition, nanofabrication, electrical characterization, and optical spectroscopy. He actively recruits students interested in nanoelectronics, nanophotonics, and atomic scale materials, providing hands-on experimental experience with close mentoring. The Device Research and Engineering Laboratory, located at 204 Singh Building (3205 Walnut Street), is equipped for advanced materials synthesis, device fabrication, and comprehensive electrical and optical characterization of nanoscale systems.

• Nanoelectronics
• Nanophotonics
• 2D Materials
• +6 more

Steven P. DenBaars is a Mitsubishi Distinguished Professor of Materials and a Distinguished Professor of Electrical & Computer Engineering at the University of California, Santa Barbara (UCSB). He serves as the Executive Director of the Solid State Lighting & Energy Electronics Center (SSLEEC) and Co-Director of the Interdisciplinary Center for Wide Bandgap Semiconductors. His research focuses on wide-bandgap semiconductors, particularly GaN-based materials for LEDs, lasers, and high-power electronics. DenBaars has pioneered advancements in solid-state lighting, including the first U.S. university demonstration of a blue GaN laser diode. Education : B.S., Materials and Metallurgical Engineering, University of Arizona (1984) M.S., Materials Science, University of Southern California (1986) Ph.D., Electrical Engineering, University of Southern California (1988) Research Interests : Wide-bandgap semiconductors (GaN), blue LEDs and lasers, high-power electronics, MOCVD growth techniques, and optoelectronic device fabrication. His work emphasizes improving efficiency and applications in lighting, displays, and energy electronics. Notable Contributions : Co-founder of Soraa, a leading company in semiconductor lighting technology. Key figure in the development of GaN-based microLEDs and UV LEDs. Awards : IEEE Fellow (2005) NAE and NAI Fellowships Aron Kressel Award (IEEE Photonics Society, 2010) NSF Young Investigator Award (1994) Labs & Teams : SSLEEC, IEE Group, and collaborations with industry partners like Cree Lighting Co. His lab focuses on MOCVD technology and device fabrication for next-generation optoelectronics.

• Wide-Bandgap Semiconductors
• GaN-Based Materials
• Light-Emitting Diodes (LEDs)
• +5 more

Dr. Tyler J. Grassman is an Associate Professor at The Ohio State University in the Departments of Materials Science and Engineering and Electrical and Computer Engineering. His research focuses on materials development and integration for electronic and photonic applications, particularly in photovoltaics and clean energy technologies. Joint appointment in Materials Science & Engineering and Electrical & Computer Engineering Research areas: epitaxy, heteroepitaxy, defect engineering, electron microscopy, computational materials science His recent work involves characterizing defects in III-V/Si heterostructures and optimizing metamorphic tunnel junctions for solar cells. Dr. Grassman received the NSF CAREER Award in 2021 for his research on dislocation-induced electronic states in III-V semiconductors. Scientific Awards: NSF CAREER Award (2021) He advises graduate students in Materials Science and Engineering and Electrical and Computer Engineering, including Marzieh Baan, Lauren Kaliszewski, and Tal Kasher. His laboratory at Fontana Laboratories (4012) uses advanced microscopy and computational modeling for materials discovery.

• Photovoltaics
• Semiconductor Materials
• Materials Integration
• +5 more