Peter Wellmann

Prof. Peter Wellmann is a faculty member at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), leading the Crystal Growth Lab within the Chair of Materials for Electronics and Energy Technology. He specializes in wide bandgap semiconductors, particularly silicon carbide (SiC), with a focus on crystal growth, material characterization, and applications in optoelectronics and solar energy. His research spans vapor transport growth, thin film technologies, and hybrid material composites.

• Education:
  • 1992: Physics Diploma, Institute of Technical Physics 1, FAU
  • 1995: Dr.-Ing. (PhD), Institute for Materials Science 6, FAU
  • 2001: Habilitation and Privatdozent (adjunct professor) at FAU
• Roles:
  • Since 2007: Full Professor at FAU
  • 2001–2006: apl. Professor (associate professor)
  • Invited Professorships at INPG (2004) and Université Montpellier 2 (2006)

Research Interests: Prof. Wellmann’s work emphasizes optimizing crystal growth techniques for SiC, including physical vapor transport (PVT) and sublimation epitaxy. His team investigates defects, doping mechanisms, and applications in high-power electronics and photonic devices. Recent studies focus on improving SiC wafer quality, thin film solar cells (chalcopyrite/kesterite), and hybrid organic/inorganic composites.

Articles Trends: His publications from 2020–2025 highlight advancements in SiC defect control, growth interface monitoring, and thin film deposition. Key areas include PVT growth optimization, thermal properties of carbon materials, and AI-driven defect analysis.

Labs & Teams: Head of the Crystal Growth Lab (CGL), collaborating on EU projects like HI-ERN and leading the German Crystal Growth Association (DGKK) as treasurer.