
About
Dr. Jan van den Hurk serves as Professor and Deputy Head of the Department of Electronic Devices at RWTH Aachen University, Germany, with his office located in room B2.02 at Campus Boulevard 53, 52074 Aachen. His research focuses on resistive memory technologies, particularly Resistive Random-Access Memory (ReRAM) and Electrochemical Metallization Memory (ECM), investigating fundamental switching mechanisms in materials like germanium sulphide.
His work spans atomic-scale interface interactions, filament dynamics, and device physics for next-generation non-volatile memory. Key contributions include understanding redox reactions in Ta2O5 interfaces, volatile resistance states for non-destructive readout, and nanobatteries requiring memristor theory extensions. His research bridges fundamental electrochemistry and practical circuit design for hybrid CMOS/nanoelectronic architectures.
Analysis of his 15 most recent publications (2012-2018) reveals consistent focus on germanium sulphide-based systems, complementary resistive switching, and in situ characterization techniques. The work demonstrates strong integration of materials synthesis, device fabrication, and theoretical modeling to address reliability challenges in memristive devices.
Scientific awards:
- No scientific awards mentioned in source materials
Advising and grants:
- No student advisees or grant funding details provided
Dr. van den Hurk operates within the eLab facility of the Department of Electronic Devices, which specializes in thin-film deposition (including custom sputtering units for synchrotron radiation studies) and nanoscale device characterization. His team develops experimental setups for in situ analysis of memory cell formation processes and explores material systems for neuromorphic computing applications.
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