Igor Prozheev

Igor Prozheev is a Researcher at the Department of Materials Physics, University of Helsinki. His research focuses on semiconductor physics, crystallography, and defects in advanced materials, particularly in nitride semiconductors and actinide compounds. Prozheev has contributed to understanding doping mechanisms in AlGaN alloys, radiation-induced defects in AlN crystals, and photonic material fabrication methods.

He has actively participated in projects funded by Business Finland, the Finnish Academy, and the US Department of Defense, including the BF WIBASE Co-Innovation initiative (2025–2028) and UWBGS US DoD research (2023–2026). His work integrates experimental techniques like positron annihilation spectroscopy and X-ray diffraction with advanced materials characterization.

Prozheev has published extensively in high-impact journals such as Nature Communications and Advanced Electronic Materials, with a focus on semiconductor defects, photonic devices, and actinide electronic structure analysis. His research has been recognized with awards including the 1st Best Poster Prize (2023) and the Haller Prize (2023).

He has conducted academic visits, including a 2.5-month stay at UCSB in 2024, to advance collaborative research efforts in materials science and photonics.