Daniel G Georgiev

Daniel G Georgiev is a Professor in the Department of Electrical Engineering and Computer Science at the University of Toledo's College of Engineering. He has been on faculty since Fall 2006, following prior roles as a research faculty member at Wayne State University's Center for Smart Sensors and Integrated Microsystems (SSIM).

• Education: M.S. in Engineering Physics (Quantum Electronics and Laser Equipment) from Sofia University (1994), Ph.D. in Electrical Engineering (Electronic Materials and Devices) from the University of Cincinnati (2003).

Research Interests: Dr. Georgiev's work focuses on laser modification and micro-structuring of materials, thin films of semiconducting oxides/nitrides (e.g., NiO, Zn3N2), glassy materials, metal whiskers (Sn, Cu), wide bandgap semiconductors (GaN, Zn3N2), photovoltaics, and biomedical device applications. His expertise spans device fabrication, material characterization, and radiation effects.

Article Trends: Recent publications emphasize GaN-based power electronics, hybrid edge termination structures, threshold switching in nanocircuitries, and material innovations via reactive sputtering. Subfields include laser microstructuring, whisker suppression in Sn films, and doping strategies for nitride semiconductors.

Collaborations: Co-authorship with researchers across institutions, including contributions to biomedical implants, II-VI nanocrystals, and chalcogenide glasses.