Berke Erbas

Berke Erbas is a researcher at the École polytechnique fédérale de Lausanne (EPFL) within the Department of Microengineering under the School of Engineering. His work focuses on advancing nanofabrication techniques through thermal scanning probe lithography (t-SPL) and complementary methods like reactive ion etching (RIE) and nanoimprint lithography (NIL).

• Education: Doctoral candidate at EPFL, specializing in semiconductor strain engineering and quantum device fabrication.

Research interests center on grayscale nanopatterning, 2D material engineering, and quantum hardware development. His innovations in strain-controlled MoS₂ transistors have demonstrated significant electron mobility improvements (185 cm²/V.s), while hybrid t-SPL/DSA approaches address sub-20 nm fabrication challenges.

Publication trends reveal expertise in combining top-down lithography with bottom-up material assembly, enabling contamination-free interfaces and scalable CMOS-compatible processes. Applications span transparent electronics, photonic devices, and quantum computing.

Labs & Collaborations: A core member of the LMIS1 laboratory, with collaborations across EPFL's Center of Micro/Nanotechnology (CMI), ETH Zürich, and international institutions. His work integrates interdisciplinary methodologies from materials science, quantum physics, and advanced manufacturing.