About
Andrej Kuznetsov is a Professor of Solid-state Physics and Quantum Technology at the University of Oslo (UiO), Norway. He holds a PhD in Physics from the National Research Nuclear University (MEPhI, Moscow) and a Docent (habilitation) in Solid State Electronics from KTH Royal Institute of Technology (Stockholm). His research focuses on semiconductor materials, particularly defects in gallium oxide (Ga2O3), radiation phenomena, and functionalization of semiconductors via ion implantation. He has held visiting professorships at institutions including Korea University, Chinese Academy of Sciences, and Aix-Marseille Université.
- Education: PhD (1992, MEPhI), Docent (2000, KTH)
- Affiliations: Department of Physics, UiO; Co-founder of International Conference on Radiation and Emission in Materials (ICREM)
- Research Themes: Ga2O3 polymorphs, radiation tolerance, defect engineering, semiconductor devices
- Key Contributions: Pioneering work on self-assembly of Ga2O3 multilayers, defect annealing mechanisms, and quantum memory platforms
His >220 publications span Nature Communications, Physical Review Letters, and Advanced Materials, with 4,900+ citations (h-index 36). He actively organizes conferences like ICDS and ICREM, and advises on radiation-resistant materials for energy and sensor applications.
Current projects include GO-POW (gallium oxide power electronics) and QuTe (quantum emitters in semiconductors). His lab focuses on combining ion beam techniques with defect engineering to create next-generation semiconductor materials.
