Andrei Vorobiev

Andrei Vorobiev is a Senior Researcher at the Department of Microtechnology and Nanoscience, Chalmers University of Technology. He holds a docent (Associate Professor) title in physical electronics. His career began in 1986 as an engineer at Design Office of Measuring Instruments, followed by roles at the Institute for Physics of Microstructures (IPM RAS) and Chalmers since 2001. He earned an M.Sc. in physics from Gorky State University (1986) and a Ph.D. in physics and mathematics from IPM RAS (2000).

Research interests focus on functional materials for microwave components, particularly multiferroic and ferroelectric thin films. Key areas include graphene field-effect transistors (GFETs), terahertz (THz) sensors, and high-frequency electronics. His over 100 publications explore charge transport in graphene, THz detectors, and device fabrication techniques.

Recent work highlights include THz biometric sensors, quasi-ballistic transport in GFETs, and diamond-substrate graphene FETs. Collaborations span flexible substrates, plasma wave observations, and high-speed photodetectors.